IP Library Granted Patent US 7,968,444
Granted Patent B2
US 7,968,444 · App. 12/655,554 · Granted Jun 28, 2011

Lead-free tin alloy electroplating compositions and methods

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Quick Facts
Patent No.
US 7,968,444
App. No.
12/655,554
Granted
Jun 28, 2011
Kind
B2
Abstract

Disclosed are electrolyte compositions for depositing a tin alloy on a substrate. The electrolyte compositions include tin ions, ions of one or more alloying metals, a flavone compound and a dihydroxy bis-sulfide. The electrolyte compositions are free of lead and cyanide. Also disclosed are methods of depositing a tin alloy on a substrate and methods of forming an interconnect bump on a semiconductor device.

Claims (20)

1. A method comprising:

a) contacting a substrate with a composition comprising one or more sources of tin ions, one or more sources of alloying metal ions, the metal ions are selected from the group consisting of silver ions, copper ions and bismuth ions, one or more flavone compounds, and one or more compounds having a formula:

HOR(R″)SR′SR(R″)OH

wherein R, R′ and R″ are the same or different and are alkylene radicals having 1 to 20 carbon atoms; and

b) passing a current through the composition to deposit the tin alloy on the substrate.

2. A method comprising:

a) providing a semiconductor die having a plurality of interconnect bump pads;

b) forming a seed layer over the interconnect bump pads;

c) depositing a tin-alloy interconnect bump layer over the interconnect bump pads by contacting the semiconductor die with a composition comprising one or more sources of tin ions, one or more sources of alloying metal ions, the metal ions are selected from the group consisting of silver ions, copper ions and bismuth ions, one or more flavone compounds, and one or more compounds having a formula:

HOR(R″)SR′SR(R″)OH

wherein R, R′ and R″ are the same or different and are alkylene radicals having 1 to 20 carbon atoms; and passing a current through the composition to deposit the tin alloy interconnect bump layer on the substrate; and

d) reflowing the interconnect bump layer.

3. A composition comprising one or more sources of tin ions, one or more sources of alloying metal ions, the metal ions are selected from the group consisting of silver ions, copper ions and bismuth ions, one or more flavone compounds, and one or more compounds having a formula:

HOR(R″)SR′SR(R″)OH

wherein R, R′ and R″ are the same or different and are alkylene radicals having 1 to 20 carbon atoms.

4. The composition of claim 3 , further comprising one or more grain refiner/stabilizer compounds.

5. The composition of claim 3 , wherein the ions of the alloying metal is silver.

6. The composition of claim 3 , wherein the one or more flavone compounds are chosen from pentahydroxy flavone, chrysin, fisetin, rutin, quercetin, myricetin and quercitrin.

7. The composition of claim 3 , further comprising one or more suppressor.

8. The composition of claim 3 , wherein the one or more flavone compounds are in amounts of 10 mg/L to 50 mg/L.

Assignments (3)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →