Manufacturing method of semiconductor device and substrate processing apparatus
View Patent ↗A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber.
1. A manufacturing method of a semiconductor device comprising:
loading a substrate into a processing chamber;
forming a first poly-crystalline film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber;
forming a second poly-crystalline film on the first poly-crystalline film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and
unloading the substrate from the processing chamber.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein the first poly-crystalline film is a boron atom-containing silicon germanium film, and the second poly-crystalline film is a boron atom-containing silicon film.
3. The manufacturing method of the semiconductor device according to claim 1 , wherein a germanium atomic ratio in a film of the first poly-crystalline film is 29% or more and 100% or less.
4. The manufacturing method of the semiconductor device according to claim 1 , wherein in the first poly-crystalline film forming step and second poly-crystalline film forming step,
the silicon atom-containing gas is silane gas or disilane gas or dichlorosilane gas;
the boron atom-containing gas is Boron trichloride gas or diborane gas or Boron trifluoride gas; and
the germanium atom-containing gas is Germane gas or digermane gas.
5. The manufacturing method of the semiconductor device according to claim 1 , wherein a resistance film having a prescribed film thickness is formed by forming the first poly-crystalline film and the second poly-crystalline film, and by varying a ratio of a film thickness of the first poly-crystalline film in the resistance film, a prescribed resistance value is secured.
6. The manufacturing method of the semiconductor device according to claim 1 , wherein in the first poly-crystalline film forming step and the second poly-crystalline film forming step, substrate temperatures are 380° C. or more and 480° C. or less, and the first poly-crystalline film forming step and the second poly-crystalline film forming step are performed in a state that the substrate temperatures are controlled to be the same temperatures.
7. The manufacturing method of the semiconductor device according to claim 1 further comprising:
forming a metal film on the second poly-crystalline film.
8. The manufacturing method of the semiconductor device, comprising:
loading a substrate into a processing chamber;
forming a first poly-crystalline film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber;
forming a second poly-crystalline film on the first poly-crystalline film, having a smaller germanium atomic ratio than that of the first poly-crystalline film, by supplying the silicon atom-containing gas, the boron atom-containing gas, and the germanium atom-containing gas into the processing chamber; and
unloading the substrate from the processing chamber.
9. The manufacturing method of the semiconductor device according to claim 8 further comprising:
forming a metal film on the second poly-crystalline film.
10. A substrate processing method, comprising:
loading a substrate into a processing chamber;
forming a first poly-crystalline film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber;
forming a second poly-crystalline film on the first poly-crystalline film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and
unloading the substrate from the processing chamber.
11. The substrate processing method according to claim 10 , wherein the first poly-crystalline film is a boron atom-containing silicon germanium film, and the second poly-crystalline film is a boron atom-containing silicon germanium film having smaller germanium atomic ratio than that of the first poly-crystalline film.
12. The substrate processing method according to claim 10 , wherein a germanium atomic ratio in a film of the second poly-crystalline film is 22% or more and 58% or less, and the germanium atomic ratio in the film of the second poly-crystalline film is smaller than the germanium atomic ratio in the film of the first poly-crystalline film.
13. The substrate processing method according to claim 10 , wherein in the first poly-crystalline film forming step and second poly-crystalline film forming step,
the silicon atom-containing gas is silane gas or disilane gas or dichlorosilane gas;
the boron atom-containing gas is Boron trichloride gas or diborane gas or Boron trifluoride gas; and
the germanium atom-containing gas is Germane gas or digermane gas.
14. The substrate processing method according to claim 10 , wherein a resistance film having a prescribed film thickness is formed by forming the first poly-crystalline film and the second poly-crystalline film, and by varying a ratio of the film thickness of the first poly-crystalline film in the resistance film, a prescribed resistance value is secured.
15. The substrate processing method according to claim 10 , wherein in the first poly-crystalline film forming step and the second poly-crystalline film forming step, a temperature of the substrate is 380° C. or more and 480° C. or less, and the steps are performed in a state that the temperature of the substrate is controlled to be the same temperature.
16. The substrate processing method according to claim 10 further comprising:
forming a metal film on the second poly-crystalline film.
17. A substrate processing method, comprising:
loading a substrate into a processing chamber;
forming a first poly-crystalline film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber;
forming a second poly-crystalline film on the first poly-crystalline film, having a smaller germanium atomic ratio than that of the first poly-crystalline film, by supplying the silicon atom-containing gas, the boron atom-containing gas, and the germanium atom-containing gas into the processing chamber; and
unloading the substrate from the processing chamber.
18. The substrate processing method according to claim 17 further comprising:
forming a metal film on the second poly-crystalline film.
19. A film forming method, comprising:
loading a substrate into a processing chamber;
forming a first poly-crystalline film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber;
forming a second poly-crystalline film on the first poly-crystalline film, by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and
unloading the substrate from the processing chamber.
20. The film forming method according to claim 19 further comprising:
forming a metal film on the second poly-crystalline film.