Semiconductor device having CMOS transfer circuit and clamp element
A semiconductor device includes an internal power-supply circuit which produces an internal potential, an external terminal which outputs the internal potential and inputs and outputs a signal with an outside, and a test mode signal terminal which transfers a test mode signal. The semiconductor device further includes a first CMOS transfer circuit and a second CMOS transfer circuit which are provided between the internal power-supply circuit and the external terminal, and which are controlled by the test mode signal, a clamp element which is connected between the first and second CMOS transfer circuits and suppresses a potential variation, and a delay element provided between the clamp element and the first CMOS transfer circuit.
1. A semiconductor device, comprising:
an internal power-supply circuit which produces an internal voltage potential;
an external terminal;
a test terminal which transfers a test mode signal;
an inverter which receives the test mode signal and outputs an inverted test mode signal;
a first transfer circuit which includes a first transistor of a first conductivity type coupled between the internal power-supply circuit and a first node and having a control gate supplied with the inverted test mode signal, and a second transistor of a second conductivity type coupled in parallel with the first transistor between the internal power-supply circuit and the first node and having a control gate supplied with the test mode signal;
a resister coupled between the first node and a second node;
a second transfer circuit which includes a third transistor of the first conductivity type coupled between the external terminal and the second node and having a control gate supplied with the inverted test mode signal, and a fourth transistor of the second conductivity type coupled in parallel with the third transistor between the external terminal and the second node and having a control gate supplied with the test mode signal; and
a clamp element which clamps a potential on the second node.
2. The semiconductor device as claimed in claim 1 , wherein the clamp element includes a fifth transistor of the first conductivity type coupled between a first power source and the second node and having a control gate supplied with the first power source.
3. The semiconductor device as claimed in claim 2 , wherein the clamp element further includes a sixth transistor of the second conductivity type coupled between a second power source and the second node, and having a control gate supplied with the second power source.
4. The semiconductor device as claimed in claim 1 , wherein the clamp element includes a fifth transistor of the first conductivity type coupled between a first power source and the second node, and having a control gate supplied with the inverted test mode signal.
5. The semiconductor device as claimed in claim 1 , further comprising an output circuit which outputs a data based on the test mode signal.