Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide
View Patent ↗Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mΩcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
1. A sintered compact for producing an amorphous film having a composite oxide composition, comprising:
a sintered compact consisting of indium, tin, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen;
said sintered compact having a relative density of 99.9% and a bulk resistance of 0.13 mΩcm.
2. A method of producing a film having a composite oxide composition, comprising the steps of:
performing sputtering to a sintered compact consisting of indium, tin, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, the sintered compact having a relative density of 99.9% and a bulk resistance of 0.13 mΩcm, and wherein, during said sputtering, an amorphous film of composite oxide having the same composition as the sintered compact is produced; and
subjecting the amorphous film of having the composite oxide composition to microfabrication treatment.
3. A method according to claim 2 , wherein said microfabrication treatment is etching.
4. A method according to claim 2 , further comprising the step of:
crystallizing the amorphous film by annealing the amorphous film at a temperature of 260° C. or lower.
5. A method according to claim 4 , wherein, during said crystallizing step, the resistivity of the crystallized film is made to be 0.4 mΩcm or less.