Bonding wire for semiconductor devices
View Patent ↗A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of <100> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the <100> orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.
1. A bonding wire for semiconductor devices, the bonding wire comprising:
a core member formed of an electrically-conductive metal; and
a skin layer formed on the core member and mainly composed of a different metal from the core member, and wherein
the metal of the skin layer is a face-centered cubic metal,
an orientation ratio of <100> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and
said <100> orientations have an angular difference relative to the wire lengthwise direction, said angular difference being within 15 degrees.
2. The bonding wire for semiconductor devices according to claim 1 , where in a total orientation ratio of <111> orientations and said <100> orientations in the crystalline orientations <hkl> in the wire lengthwise direction at the crystal face of the surface of the skin layer is greater than or equal to 60%, and
said <111> orientations have an angular difference relative to the wire lengthwise direction, said angular difference being within 15 degrees.
3. The bonding wire for semiconductor devices according to claim 1 , wherein an orientation ratio of <111> orientations and said <100> orientation in the crystalline orientations <hkl> in the wire lengthwise direction at a crystal face of a cross section of the core member is greater than or equal to 30%, and
said <111> orientations have an angular difference relative to the wire lengthwise direction, said angular difference being within 15 degrees.
4. The bonding wire for semiconductor devices according to claim 1 , wherein a ratio of an average size of a crystal grain at the surface of the skin layer in the wire lengthwise direction relative to an average size of the crystal grain at the surface of the skin layer in the circumferential direction is greater than or equal to three.
5. The bonding wire for semiconductor devices according to claim 1 , wherein a percentage of an area of crystal grains where crystalline orientation in the wire lengthwise direction at the surface of the skin layer is <100> is greater than or equal to 30% relative to a total area of a wire surface.
6. The bonding wire for semiconductor devices according to claim 1 , wherein a main constituent of the skin layer is Pd, Pt, Ru or Ag.
7. The bonding wire for semiconductor devices according to claim 1 , wherein a main constituent of the core member is Cu or Au.
8. The bonding wire for semiconductor devices according to claim 1 , wherein a thickness of the skin layer is within a range from 0.005 to 0.2 μm.
9. The bonding wire for semiconductor devices according to claim 1 , further comprising a diffusion layer formed between the skin layer and the core member and having a concentration gradient.
10. The bonding wire for semiconductor devices according to claim 6 , wherein the main constituent of the core member is Cu and the core member contains greater than or equal to at least one kind of followings: B; Pd; Bi; and P at a concentration within a range from 5 to 300 ppm.
11. The bonding wire for semiconductor devices according to claim 6 , wherein
the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and
the main constituent of the skin layer is Pd or Ag.
12. The bonding wire for semiconductor devices according to claim 6 , wherein the main constituent of the core member is Au and the core member contains greater than or equal to at least one kind of followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm.
13. The bonding wire for semiconductor devices according to claim 1 , further comprising an intermediate metal layer, formed between the skin layer and the core member, and composed of a different constituent from the main constituent of the skin layer and the main constituent of the core member.