Integrated heat sink
An electronic device includes a heat dissipating component located over a substrate. An isolation trench is formed in the substrate adjacent the component. A contact region of the substrate is bounded by the trench. An electrically isolated contact is located over and in contact with the contact region. The electrically isolated contact and the contact region provide a thermally conductive path to the substrate.
1. An electronic device, comprising:
a heat dissipating component located over a substrate;
an isolation trench formed in said substrate adjacent said component;
a contact region of said substrate bounded by said trench; and
an electrically isolated contact located over and in connected to said contact region, said electrically isolated contact and said contact region providing a thermally conductive path to the substrate.
2. The device of claim 1 , further comprising an electrically isolated interconnect metal portion located over said contact region, wherein said electrically isolated contact is located between said interconnect metal portion and said contact region, said electrically isolated contact providing a thermally conductive path from said interconnect metal portion to said contact region.
3. The device of claim 1 , wherein said isolation trench is a first isolation trench, said contact region is a first contact region, and said electrically isolated contact is a first electrically isolated contact, and further comprising:
a second isolation trench located adjacent said component;
a second contact region bounded by said second isolation trench; and
a second electrically isolated contact connected to said second contact region,
wherein said component is interposed between said first and second contact regions.
4. The device of claim 3 , further comprising a first interconnect metal portion located over said first contact region and a second interconnect metal portion located over said second contact region, wherein said first contact is located between said first interconnect metal portion and said first contact region, and said second contact is located between said second interconnect metal portion and said second contact region.
5. The device of claim 4 , wherein said first and said second interconnect metal portions are a same interconnect metal portion.
6. The device of claim 1 , further comprising a via conductively coupled to said electrically isolated contact.
7. The device of claim 1 , wherein said electrically isolated contact is one of a plurality of electrically isolated contacts connected to said contact region.
8. The device of claim 7 , wherein said plurality of electrically isolated contacts is connected to a same interconnect metal portion.
9. The device of claim 1 , wherein said trench completely surrounds said contact region.
10. The device of claim 1 , wherein said component is a resistor.
11. A method of forming an electronic device, comprising:
providing a substrate having a heat-dissipating component located thereover, an isolation trench adjacent said component, and a contact region of the substrate bounded by said trench; and
locating an electrically isolated contact over and in contact with said contact region, said contact and said contact region providing a thermally conducting path to said substrate.
12. The method of claim 11 , further comprising locating an interconnect metal portion over said contact region, wherein said electrically isolated contact is located between said interconnect metal portion and said contact region, said electrically isolated contact providing a thermally conductive path from said interconnect metal portion to said contact region.
13. The method of claim 11 , wherein said isolation trench is a first isolation trench, said contact region is a first contact region, and said electrically isolated contact is a first electrically isolated contact, and further comprising:
locating a second isolation trench adjacent said component, the second isolation trench bounding a second contact region, wherein said component is interposed between said first and second contact regions; and
locating a second contact over and in contact with said second contact region.
14. The method of claim 13 , further comprising locating a first interconnect metal portion over said first contact region and locating a second interconnect metal portion over said second contact region, such that said first contact is located between said first interconnect metal portion and said first contact region, and said second contact is located between said second interconnect metal portion and said second contact region.
15. The method of claim 14 , wherein said first and said second interconnect metal portions are a same interconnect metal portion.
16. The method of claim 11 , further comprising forming a via that is conductively coupled to said electrically isolated contact.
17. The method of claim 11 , wherein said electrically isolated contact is one of a plurality of electrically isolated contacts each located adjacent said component.
18. The method of claim 17 , wherein said plurality of electrically isolated contacts is connected to a same interconnect metal portion.
19. The method of claim 11 , wherein said trench completely surrounds said contact region.
20. The method of claim 11 , wherein said component is a resistor.