IP Library Granted Patent US 8,319,294
Granted Patent B2
US 8,319,294 · App. 12/695,964 · Granted Nov 27, 2012

Techniques for providing a source line plane

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Quick Facts
Patent No.
US 8,319,294
App. No.
12/695,964
Granted
Nov 27, 2012
Kind
B2
Abstract

Techniques for providing a source line plane are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for providing a source line plane. The apparatus may comprise a source line plane coupled to at least one constant voltage source. The apparatus may also comprise a plurality of memory cells arranged in an array of rows and columns, each memory cell including one or more memory transistors. Each of the one or more memory transistors may comprise a first region coupled to the source line plane, a second region coupled to a bit line, a body region disposed between the first region and the second region, wherein the body region may be electrically floating, and a gate coupled to a word line and spaced apart from, and capacitively coupled to, the body region.

Claims (37)

1. An apparatus for providing a source line plane comprising:

a source line plane coupled to at least one constant voltage source, wherein the source line plane is at least one of a source line grid and a single plate; and

a plurality of memory cells arranged in an array of rows and columns, each memory cell including one or more memory transistors comprising:

a first region coupled to the source line plane;

a second region coupled to a bit line;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to a word line and spaced apart from, and capacitively coupled to, the body region.

2. The apparatus according to claim 1 , wherein the at least one constant voltage source provides at least one connection to ground.

3. The apparatus according to claim 2 , wherein the at least one constant voltage source provides at least one internal ground connection associated with the plurality of memory cells.

4. The apparatus according to claim 2 , wherein the at least one constant voltage source provides at least one external ground connection coupled to the plurality of memory cells.

5. The apparatus according to claim 1 , wherein the at least one constant voltage source provides a connection to at least one voltage potential.

6. The apparatus according to claim 5 , wherein the at least one constant voltage source provides at least one internal voltage potential associated with the plurality of memory cells.

7. The apparatus according to claim 5 , wherein the at least one constant voltage source provides at least one external voltage potential coupled to the plurality of memory cells.

8. The apparatus according to claim 1 , wherein the source line plane comprises a plurality of source lines coupled to the plurality of memory cells.

9. The apparatus according to claim 1 , wherein the first region is coupled to the source line plane via a source line.

10. The apparatus according to claim 1 , wherein the plurality of memory cells are arranged in a plurality of sub-arrays of rows and columns.

11. The apparatus according to claim 10 , wherein the source line plane is associated with each of the plurality of sub-arrays of memory cells.

12. The apparatus according to claim 11 , wherein the source line plane is a comprehensive source line plane based at least in part on its association with the each of the plurality of sub-arrays of memory cells.

13. The apparatus according to claim 12 , wherein the comprehensive source line plane is coupled to the at least one constant voltage source.

14. The apparatus according to claim 1 , wherein the source line plane includes a plurality of sub-layers of at least one of a source line grid and a single plate.

15. A method for providing a source line plane comprising the steps of:

coupling a source line plane to at least one constant voltage source, wherein the source line plane is at least one of a source line grid and a single plate; and

arranging a plurality of memory cells in an array of rows and columns, each memory cell including one or more memory transistors comprising:

a first region coupled to the source line plane;

a second region coupled to a bit line;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to a word line and spaced apart from, and capacitively coupled to, the body region.

16. The method according to claim 15 , wherein the at least one constant voltage source provides at least one connection to ground.

17. The method according to claim 15 , wherein the at least one constant voltage source provides a connection to at least one voltage potential.

18. The method according to claim 15 , wherein the source line plane comprises a plurality of source lines coupled to the plurality of memory cells.

19. The method according to claim 15 , wherein the first region is coupled to the source line plane via a source line.

20. The method according to claim 15 , wherein the at least one constant voltage source is at least one internal voltage source associated with the plurality of memory cells.

21. The method according to claim 15 , wherein the at least one constant voltage source is at least one external voltage source coupled to the plurality of memory cells.

22. The method according to claim 15 , wherein the plurality of memory cells are arranged in a plurality of sub-arrays of rows and columns.

23. The method according to claim 22 , wherein the source line plane is associated with each of the plurality of sub-arrays of memory cells.

24. The method according to claim 23 , wherein the source line plane is a comprehensive source line plane based at least in part on its association with the each of the plurality of sub-arrays of memory cells.

25. The method according to claim 24 , wherein the comprehensive source line plane is coupled to the at least one constant voltage source.

Assignments (9)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2011
From: INNOVATIVE SILICON ISI S.A.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 025850/0798 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 2, 2010
From: HOLD, BETINA
To: INNOVATIVE SILICON ISI SA
Reel/Frame 023884/0358 →