Plasma etching method and plasma etching apparatus
View Patent ↗In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
1. A plasma etching method for plasma etching a magnetic film containing at least one element selected from the group consisting of Fe, Co and Ni in a processing chamber using a gas containing C element and O element,
the method comprising:
etching the magnetic film by a time-modulated plasma; and
supplying a plasma generating gas, that is different from the gas containing C element and O element, to the processing chamber during a period with high amplitude of a time-modulated antenna power,
wherein a period with low amplitude of the time-modulated antenna power includes a first period, a second period, and a third period,
the first period is a period in which an electron temperature relaxes, and also is a period in which the gas containing C element and O element is not supplied to the processing chamber,
the second period is a period in which the gas containing C element and O element is supplied to the processing chamber, and
the third period is a period in which the gas containing C element and O element is not supplied to the processing chamber.
2. The plasma etching method according to claim 1 , wherein
the plasma generating gas is further fed to the processing chamber during the second period.
3. The plasma etching method according to claim 1 , wherein
the amount of gas containing C element and 0 element fed during the second period is varied with time.
4. The plasma etching method according to claim 1 , wherein
a rare gas or a mixed gas containing the same is used as the plasma generating gas.
5. The plasma etching method according to claim 1 , wherein
CO, CH 3 OH, C 2 H 5 OH, C 3 H 7 OH or CO 2 is used as the gas containing C element and O element.
6. The plasma etching method according to claim 1 , wherein
the low amplitude of time-modulated antenna power is 1/10 or smaller of the high amplitude of time-modulated antenna power.
7. The plasma etching method according to claim 1 , wherein the first period is equal to or greater than 1 μs, and the third period is equal to or greater than 1 ms and is equal to or smaller than 50 ms.
8. The plasma etching method according to claim 1 , wherein H 2 gas or NH 3 gas is further supplied to the processing chamber during the second period.
9. The plasma etching method according to claim 4 , wherein said rare gas is selected from the group consisting of He, Ar and Xe.