PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY COMPRISING A COOLING DEVICE
A projection exposure apparatus for semiconductor lithography includes a cooling device for cooling components of the projection exposure apparatus. The cooling device contains a liquid cooling medium having a thermal conductivity of greater than 5W/mK.
1 . An apparatus, comprising:
a component that forms at least part of a housing of the apparatus;
a cooling device thermally coupled to the component; and
a liquid cooling medium in the cooling device, the liquid cooling medium having a thermal conductivity of greater than 5 W/mK, wherein the apparatus is a projection exposure apparatus for semiconductor microlithography.
2 . The apparatus according to claim 1 , wherein the liquid cooling medium is a liquid metal or a liquid metal alloy.
3 . The apparatus according to claim 2 , wherein the liquid cooling medium comprises at least one element selected from from the group consisting of bismuth (Bi), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), gallium (Ga), indium (In), tin (Sn) and mercury (Hg).
4 . The apparatus according to claim 3 , wherein the liquid cooling medium comprises between 55% and 75% gallium, between 18% and 24% indium, and between 14% and 18% tin.
5 . The apparatus according to claim 1 , wherein the component is an optical component.
6 . The apparatus according to claim 1 , wherein the component is part of an illumination system of the projection exposure apparatus.
7 . The apparatus according to claim 1 , wherein the component is part of a projection objective of the projection exposure apparatus.
8 . The apparatus according to claim 1 , further comprising a coil on the component, wherein the cool is in fliud communication with the cooling device.
9 . The apparatus according to claim 9 , wherein the component has a cavity configured to guide the liquid cooling medium.
10 . The apparatus according to claim 9 , wherein the cavity is a planar cavity.
11 . The apparatus according to claim 9 , wherein the cavity is a meandering channel.
12 . The apparatus according to claim 1 , wherein the projection exposure apparatus is an EUV projection exposure apparatus.
13 . An apparatus, comprising:
a component that forms a compartment in the apparatus;
a cooling device thermally coupled with the component; and
a liquid cooling medium in the cooling device, the liquid cooling medium having a thermal conductivity greater than 5 W/mK,
wherein the apparatus is a projection exposure apparatus for semiconductor lithography.
14 . The apparatus according to claim 13 , wherein the liquid cooling medium is a liquid metal or a liquid metal alloy.
15 . The apparatus according to claim 14 , wherein the liquid cooling medium comprises at least one element selected from from the group consisting of bismuth (Bi), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), gallium (Ga), indium (In), tin (Sn) and mercury (Hg).
16 . The apparatus according to claim 15 , wherein the liquid cooling medium comprises between 55% and 75% gallium, between 18% and 24% indium, and between 14% and 18% tin.
17 . The apparatus according to claim 13 , wherein the component is an optical component.
18 . An apparatus, comprising:
a cooling device configured to cool components of the apparatus; and
a liquid cooling medium in the cooling device, the liquid cooling medium comprising between 55% and 75% gallium, between 18% and 24% indium, and between 14% and 18% tin,
wherein the apparatus is a projection exposure apparatus for semiconductor lithography.
19 . The apparatus according to claim 18 , wherein the component is an optical component.
20 . The apparatus according to claim 18 , wherein at least one of the following holds:
the component forms at least part of a housing of the apparatus; and
the component forms a compartment in the housing.