Positive resist composition and patterning process
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
1. A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group having the general formula (1):
wherein R 1 is hydrogen, a C 1 -C 4 alkyl, alkoxy, alkanoyl or alkoxycarbonyl group, C 6 -C 10 aryl group, halogen, or cyano group, and m is an integer of 1 to 4.
2. The resist composition of claim 1 comprising as the base resin a polymer comprising recurring units (a) of the general formula (2), selected from (meth)acrylic acid and derivatives thereof, styrenecarboxylic acid, and vinylnaphthalenecarboxylic acid, each having substituted thereon an acid labile group of formula (1), the polymer having a weight average molecular weight of 1,000 to 500,000,
wherein R 1 and m are as defined above, R 2 is hydrogen or methyl, X 1 is a single bond, —C(═O)—O—R 3 —, phenylene or naphthylene, and R 3 is a straight, branched or cyclic C 1 -C 10 alkylene group which may have an ester, ether or lactone group.
3. The resist composition of claim 2 wherein said polymer is a copolymer comprising recurring units (a) of the general formula (2), selected from (meth)acrylic acid and derivatives thereof, styrenecarboxylic acid, and vinylnaphthalenecarboxylic acid, each having substituted thereon an acid labile group of formula (1), and recurring units (b) having an adhesive group selected from the class consisting of hydroxyl, lactone, ether, ester, carbonyl, and cyano groups, molar fractions “a” and “b” of the respective units being in the range: 0<a<1.0, 0<b<1.0, and 0.05≦a+b≦1.0, the copolymer having a weight average molecular weight of 1,000 to 500,000.
4. The resist composition of claim 3 wherein the recurring units (b) are recurring units having a phenolic hydroxyl group.
5. The resist composition of claim 4 wherein the recurring units having a phenolic hydroxyl group are selected from units (b1) to (b8) represented by the general formula (3):
wherein X 2 and X 3 each are a single bond or —C(═O)—O—R 5 —, X 4 and X 5 each are —C(═O)—O—R 5 —, R 5 is a single bond or a straight, branched or cyclic C 1 -C 10 alkylene group, R 4 is each independently hydrogen or methyl, Y 1 and Y 2 each are methylene or ethylene, A is methylene, oxygen or sulfur, and n is 1 or 2.
6. The resist composition of claim 3 wherein the copolymer has further copolymerized therein recurring units selected from units (c1) to (c5) of indene, acenaphthylene, chromone, coumarin, and norbornadiene, or derivatives thereof, represented by the general formula (4):
wherein R 9 to R 13 are each independently hydrogen, a C 1 -C 30 alkyl, haloalkyl, alkoxy, alkanoyl or alkoxycarbonyl group, C 6 -C 10 aryl group, halogen, or 1,1,1,3,3,3-hexafluoro-2-propanol group, and Z is methylene, oxygen or sulfur.
7. The resist composition of claim 3 wherein the copolymer has further copolymerized therein units selected from sulfonium salts (d1) to (d3) represented by the general formula (5):
wherein R 20 , R 24 and R 28 each are hydrogen or methyl, R 21 is a single bond, phenylene, —O—R 33 —, or —C(═O)—Y—R 33 —, Y is oxygen or NH, R 33 is a straight, branched or cyclic C 1 -C 6 alkylene group, phenylene group or alkenylene group, which may contain a carbonyl, ester, ether or hydroxyl group, R 22 , R 23 , R 25 , R 26 , R 27 , R 29 , R 30 , and R 31 are each independently a straight, branched or cyclic C 1 -C 12 alkyl group which may contain a carbonyl, ester or ether group, or C 6 -C 12 aryl group, C 7 -C 20 aralkyl group, or thiophenyl group, Z 0 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—R 32 —, or —C(═O)—Z 1 —R 32 —, Z 1 is oxygen or NH, R 32 is a straight, branched or cyclic C 1 -C 6 alkylene group, phenylene group or alkenylene group, which may contain a carbonyl, ester, ether or hydroxyl group, M − is a non-nucleophilic counter ion, and molar fractions d1 to d3 are in the range: 0≦d1≦0.3, 0≦d2≦0.3, 0≦d3≦0.3, and 0<d1+d2+d3≦0.3.
8. The resist composition of claim 1 , further comprising an organic solvent and an acid generator, the composition being a chemically amplified positive resist composition.
9. The resist composition of claim 8 , further comprising a dissolution regulator.
10. The resist composition of claim 8 , further comprising a basic compound and/or a surfactant as an additive.
11. A pattern forming process comprising the steps of applying the positive resist composition of claim 1 onto a substrate to form a coating, heat treating and exposing the coating to high-energy radiation, and developing the exposed coating with a developer.
12. The process of claim 11 wherein the developer is an aqueous solution containing 1 to 10% by weight of tetraethylammonium hydroxide, tetrapropylammonium hydroxide or tetrabutylammonium hydroxide.