INCLINED EXPOSURE LITHOGRAPHY SYSTEM
An inclined exposure lithography system is disclosed, which comprises: a substrate; a photoresist layer, formed on the substrate; a mask, disposed over the photoresist layer with a gap therebetween; and a refraction element disposed over the mask so that a light beam from a light source is refracted by a specific angle.
1 . An inclined exposure lithography system for forming an optical film, the inclined exposure lithography system comprising:
a substrate;
a photoresist layer formed on the substrate;
a mask, disposed over the photoresist layer with a gap therebetween; and
a refraction element disposed over the mask so that a light beam from a light source is refracted by a specific angle.
2 . The inclined exposure lithography system as recited in claim 1 , wherein the refraction element is a prism.
3 . The inclined exposure lithography system as recited in claim 2 , wherein the prism is a polygonal prism.
4 . The inclined exposure lithography system as recited in claim 2 , wherein the prism is coated with a transparent medium thereon.
5 . The inclined exposure lithography system as recited in claim 1 , wherein the gap is larger than 5 μm and smaller than 150 μm.
6 . The inclined exposure lithography system as recited in claim 1 , wherein the light source comprises a light guide module.
7 . The inclined exposure lithography system as recited in claim 1 , wherein the refraction element is a triangular prism.
8 . The inclined exposure lithography system as recited in claim 1 , wherein the refraction element is a micro-structure grating.
9 . The inclined exposure lithography system as recited in claim 8 , wherein the optical path difference of the light beam passing through slits of the micro-structure grating is integer times of the wavelength of the light beam.
10 . The inclined exposure lithography system as recited in claim 1 , wherein the substrate is a silicon substrate, a glass substrate or an acrylic substrate.
11 . The inclined exposure lithography system as recited in claim 1 , wherein the light source is an ultra-violet (UV) light source.
12 . The inclined exposure lithography system as recited in claim 1 , wherein the photoresist layer is a positive photoresist layer or a negative photoresist layer.
13 . The inclined exposure lithography system as recited in claim 1 , wherein the refraction element comprises a material selected from a group consisting of glass, quartz, plastic and polymer.
14 . The inclined exposure lithography system as recited in claim 1 , wherein the specific angle is larger than 0 degree and smaller than 180 degrees.
15 . The inclined exposure lithography system as recited in claim 1 , wherein the substrate, the photoresist layer, the mask and the refraction element is immersed in a liquid, wherein the refraction index of the refraction element is different from that of the liquid.