Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device and a manufacturing method thereof are disclosed. A first insulation layer is formed on a semiconductor die, a redistribution layer electrically connected to a bond pad is formed on the first insulation layer, and a second insulation layer covers the redistribution layer. The second insulation layer is made of a cheap, non-photosensitive material. Accordingly, the manufacturing cost of the semiconductor device can be reduced.
1. A semiconductor device comprising:
a semiconductor die comprising: a first surface;
a bond pad formed on the first surface; and
a passivation layer formed on the first surface, the passivation layer comprising an opening exposing the bond pad;
a redistribution layer electrically connected to the bond pad and extended over the first surface of the semiconductor die;
a solder ball attached to the redistribution layer and having sidewalls which conform only to the redistribution layer; and
an insulation layer formed on the redistribution layer to expose the solder ball upward, wherein the insulation layer is made of a non-photosensitive material.
2. The semiconductor device of claim 1 , wherein the insulation layer comprises a non-photosensitive material selected from the group consisting of an epoxy molding compound (EMC), polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), bismaleimidetriazine (BT), and phenolic resin.
3. The semiconductor device of claim 1 , wherein the insulation layer comprises an insulative dry film.
4. The semiconductor device of claim 1 , wherein the insulation layer comprises epoxy.
5. The semiconductor device of claim 1 further comprising a redistribution seed layer between the redistribution layer and the bond pad and between the redistribution layer and the passivation layer.
6. The semiconductor device of claim 1 wherein the insulation layer is formed directly on the redistribution layer and the passivation layer.
7. The semiconductor device of claim 1 further comprising a first insulation layer formed on the passivation layer, the first insulation layer comprising an opening exposing the bond pad, the insulation layer being a second insulation layer.
8. The semiconductor device of claim 7 , wherein the first insulation layer is made of a photosensitive material.
9. The semiconductor device of claim 7 further comprising a redistribution seed layer between the redistribution layer and the bond pad and between the redistribution layer and the first insulation layer.
10. The semiconductor device of claim 7 wherein the second insulation layer is formed directly on the redistribution layer and the first insulation layer.
11. The semiconductor device of claim 1 , wherein the insulation layer covers a portion of the redistribution layer and is formed to have the same planar shape as that of the redistribution layer.
12. The semiconductor device of claim 1 , wherein the insulation layer has a smaller area than the first surface of the semiconductor die.
13. The semiconductor device of claim 12 wherein a periphery of the first surface of the semiconductor die is exposed from the insulation layer.
14. The semiconductor device of claim 1 , wherein the redistribution layer comprising:
a line-shaped trace; and
a ball pad connected to the trace, the solder ball being attached to the ball pad.
15. The semiconductor device of claim 14 wherein a line width of the trace is 50% or less of a diameter of the ball pad.
16. A semiconductor device comprising:
a semiconductor die comprising:
a first surface;
a bond pad formed on the first surface; and
a passivation layer formed on the first surface, the passivation layer comprising an opening exposing the bond pad;
a first insulation layer formed on the passivation layer, the first insulation layer comprising an opening exposing the bond pad; a redistribution layer electrically connected to the bond pad;
a solder ball attached to the redistribution layer directly above the bond pad and having sidewalls which conform only to the redistribution layer; and
a second insulation layer exposing the solder ball upward, wherein the second insulation layer is made of a non-photosensitive material.
17. The semiconductor device of claim 16 , wherein the first insulation layer is made of a photosensitive material.
18. The semiconductor device of claim 16 further comprising a redistribution seed layer between the redistribution layer and the bond pad.
19. A semiconductor device comprising:
a semiconductor die comprising:
a first surface;
a bond pad formed on the first surface; and
a passivation layer formed on the first surface, the passivation layer comprising an opening exposing the bond pad;
a first insulation layer formed on the passivation layer, the first insulation layer comprising an opening exposing the bond pad, the first insulation layer being made of a photosensitive material;
a redistribution layer having a first end electrically connected to the bond pad and a second end extended over the first surface of the semiconductor die;
a solder ball attached to the second end of the redistribution layer and having sidewalls which conform only to the redistribution layer; and
a second insulation layer exposing the solder ball upward, wherein the second insulation layer is made of a non-photosensitive material.
20. The semiconductor device of claim 19 wherein the second insulation layer is formed directly on the redistribution layer and the first insulation layer.