Apparatus for making interconnect seed layers and products
An apparatus for depositing seed layers over a substrate, which substrate includes a patterned insulating layer with at least one opening surrounded by a field, and which opening has sidewalls, bottom surfaces and top corners, includes: a CVD chamber adapted to deposit one or more CVD seed layers over the substrate; a PVD chamber adapted to deposit one or more PVD seed layers over the substrate; and a controller which includes recipe information. The recipe information includes deposition sequence and process parameters for operation of the deposition chambers. The controller, in response to the recipe information, causes the CVD chamber to deposit a continuous CVD seed layer over the substrate, and causes the PVD chamber to deposit a PVD seed layer over the substrate, wherein: (a) the continuous CVD seed layer is continuous over the sidewalls and bottom surfaces of the at least one opening, (b) the continuous CVD seed layer has a thickness from about 20 Å to about 250 Å over the field, and (c) the controller causes the stopping of the deposition of the seed layers so as to leave room for electroplating inside the at least one opening.
1. An apparatus for depositing seed layers over a substrate, the substrate includes a patterned insulating layer which comprises at least one opening surrounded by a field, the at least one opening having sidewalls and bottom surfaces and top corners, and the apparatus comprising:
a CVD chamber adapted to deposit one or more CVD seed layers over the substrate;
a PVD chamber adapted to deposit one or more PVD seed layers over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, causes the CVD chamber to first deposit a continuous CVD seed layer over the substrate, and then causes the PVD chamber to deposit a PVD seed layer over the continuous CVD seed layer, wherein: (a) the continuous CVD seed layer is continuous over the sidewalls and bottom surfaces of the at least one opening, (b) the continuous CVD seed layer has a thickness from about 20 Å to about 250 Å over the field, and (c) the controller causes the stopping of the deposition of the seed layers so as to leave room for electroplating inside the at least one opening.
2. The apparatus of claim 1 wherein at least one of the seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
3. The apparatus of claim 2 wherein the CVD chamber comprises an ALD chamber and the continuous CVD seed layer comprises a continuous ALD seed layer.
4. The apparatus of claim 3 wherein the PVD seed layer has no substantial overhangs sealing or pinching-off the top corners of the at least one opening.
5. The apparatus of claim 4 wherein the combined thickness of the seed layers over the field enables uniform electroplating across the substrate.
6. The apparatus of claim 3 wherein the thickness of the PVD seed layer is from about 100 Å to about 3,000 Å over the field.
7. The apparatus of claim 6 wherein the thickness of the continuous ALD seed layer is from about 20 Å to about 150 Å over the field.
8. The apparatus of claim 6 wherein the thickness of the continuous ALD seed layer is from about 20 Å to about 100 Å over the field.
9. A semiconductor device comprising a metallic interconnect produced by the apparatus of claim 6 .
10. The apparatus of claim 3 wherein the thickness of the continuous ALD seed layer is from about 20 Å to about 50 Å over the field.
11. The apparatus of claim 3 wherein the thickness of the continuous ALD seed layer is from about 20 Å to about 200 Å over the field.
12. A semiconductor device comprising a metallic interconnect produced by the apparatus of claim 11 .
13. The apparatus of claim 2 wherein the thickness of the continuous CVD seed layer is from about 20 Å to about 100 Å over the field.
14. The apparatus of claim 2 wherein the thickness of the continuous CVD seed layer is from about 20 Å to about 150 Å over the field.
15. The apparatus of claim 2 wherein the PVD seed layer has no substantial overhangs sealing or pinching-off the top corners of the at least one opening.
16. The apparatus of claim 15 wherein the combined thickness of the seed layers over the field enables uniform electroplating across the substrate.
17. The apparatus of claim 2 wherein the thickness of the PVD seed layer over the field is from about 100 Å to about 3,000 Å.
18. The apparatus of claim 17 wherein the thickness of the continuous CVD seed layer over the field is from about 50 Å to about 250 Å.
19. The apparatus of claim 18 wherein the thickness of the continuous CVD seed layer is from about 50 Å to about 200 Å over the field.
20. The apparatus of claim 18 wherein the thickness of the continuous CVD seed layer is from about 50 Å to about 100 Å over the field.
21. The apparatus of claim 17 wherein the thickness of the continuous CVD seed layer over the field is from about 20 Å to about 200 Å.
22. The apparatus of claim 21 wherein the thickness of the continuous CVD seed layer over the field is from about 20 Å to about 50 Å.
23. A semiconductor device comprising a metallic interconnect produced by the apparatus of claim 17 .
24. A semiconductor device comprising a metallic interconnect produced by the apparatus of claim 2 .
25. The apparatus of claim 1 wherein at least one of the CVD seed layer and the PVD seed layer comprises Cu.
26. The apparatus of claim 1 wherein both the CVD seed layer and the PVD seed layer comprise Cu.
27. The apparatus of claim 1 wherein at least one of the CVD seed layer and the PVD seed layer comprises Ag.
28. The apparatus of claim 1 wherein both the CVD seed layer and the PVD seed layer comprise Ag.