IP Library Granted Patent US 9,062,369
Granted Patent B2
US 9,062,369 · App. 12/730,800 · Granted Jun 23, 2015

Deposition of high vapor pressure materials

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,062,369
App. No.
12/730,800
Granted
Jun 23, 2015
Kind
B2
Abstract

The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

Claims (24)

1. A vacuum deposition apparatus comprising a vacuum deposition source comprising a body having a crucible for holding deposition material, the vacuum deposition apparatus also comprising a conductance portion operatively connecting the vacuum deposition source to a nozzle, the conductance portion including a connection element for mounting the vacuum deposition source external to a vacuum deposition chamber while permitting fluid communication from the vacuum deposition source to the nozzle as the nozzle is extended from the connection element to be positionable within the vacuum deposition chamber for directing vaporized source material to a substrate within the vacuum deposition chamber, the nozzle comprising:

a nozzle conductance tube in fluid communication with the crucible by way of the conductance portion, the nozzle conductance tube extending longitudinally and comprising a plurality of axially spaced openings along the longitude of the nozzle conductance tube through which vaporized deposition material can pass;

a jacket surrounding at least a portion of the nozzle conductance tube and extending along the nozzle conductance tube, the jacket providing a pressure controllable region within the jacket and within which the at least a portion of the nozzle conductance tube is positioned, the pressure controllable region having a connection element to connect with a pressure source so that pressure within the pressure controllable region can be independently controlled from an environment of the deposition chamber to create an environment within the pressure controllable region where convective heat transfer is possible between the nozzle conductive tube and the jacket; and

at least one heater element positioned within the jacket for providing convective heat transfer with the nozzle conductance tube and the jacket by way of the created environment within the pressure controllable region,

wherein the openings along the nozzle conductance tube are operatively connected with nozzle elements that allow fluid communication from within the nozzle conductance tube to outside of the jacket at axial spaced locations to permit fluid communication of vaporized deposition material from the vacuum deposition source to within the vacuum deposition chamber when the nozzle is positioned therein.

2. The deposition apparatus of claim 1 , comprising a valve for regulating the flow of vaporized source material from the crucible.

3. The deposition apparatus of claim 1 , wherein the nozzle comprises a plurality of spaced apart linear sections that are connected together by a lateral section.

4. The deposition apparatus of claim 3 , comprising a plurality of spaced apart nozzle openings and nozzle elements as provided along each linear section.

5. The vacuum deposition apparatus of claim 1 in combination with a vacuum deposition system.

6. The deposition apparatus and deposition system combination of claim 5 wherein the deposition system comprises a photovoltaic device manufacturing system.

7. The deposition apparatus and deposition system combination of claim 5 wherein the nozzle is oriented in an upward-facing configuration relative to the source as determined by a mounting configuration of the connecting element.

8. The deposition apparatus and deposition system combination of claim 5 wherein the nozzle is oriented in a downward-facing configuration relative to the source as determined by a mounting configuration of the connecting element.

9. The deposition apparatus and deposition system combination of claim 5 wherein the vacuum deposition apparatus is configured with selenium within the crucible for depositing selenium.

10. A nozzle for a vacuum deposition source, the nozzle positionable within a vacuum deposition chamber for directing vaporized source material to a substrate within the vacuum deposition chamber, the nozzle comprising:

a nozzle conductance tube that can be connected in fluid communication with a source of deposition material, the nozzle conductance tube extending longitudinally and comprising a plurality of axially spaced nozzle openings along the longitude the nozzle conductance tube through which vaporized deposition material can pass;

a jacket surrounding at least a portion of the nozzle conductance tube and extending along the nozzle conductance tube, the jacket providing a pressure controllable and vacuum tight enclosure within the jacket and within which the at least a portion of the nozzle conductance tube is positioned, the pressure controllable region having a connection element to connect with a pressure source so that pressure within the pressure controllable region can be independently controlled from an environment of the deposition chamber to create an environment within the pressure controllable region where convective heat transfer is possible between the nozzle conductive tube and the jacket; and

at least one heater element positioned within the jacket for providing convective heat transfer with the nozzle conductance tube and the jacket by way of the created environment within the pressure controllable region,

wherein the openings along the nozzle conductance tube are operatively connected with nozzle elements that allow fluid communication from within the nozzle conductance tube to outside of the jacket at axial spaced locations to permit fluid communication of vaporized deposition material from the source of deposition material to within the vacuum deposition chamber when the nozzle is positioned therein.

11. The nozzle of claim 10 in combination with a vacuum deposition source comprising a crucible for deposition material.

12. The nozzle and source combination of claim 11 , comprising a valve for regulating the flow of vaporized source material from the crucible.

13. The nozzle of claim 10 , wherein the nozzle comprises a plurality of spaced apart linear sections that are connected together by a lateral section.

14. The nozzle of claim 13 , comprising a plurality of spaced apart nozzle openings and nozzle elements as provided along each linear section.

15. The nozzle of claim 10 in combination with a vacuum deposition system.

16. The nozzle and deposition system combination of claim 15 wherein the deposition system comprises a photovoltaic device manufacturing system.

Assignments (3)
SECURITY INTEREST Recorded Jun 16, 2025
From: VEECO INSTRUMENTS INC.
To: HSBC BANK USA, NATIONAL ASSOCIATION
Reel/Frame 071649/0225 →
PATENT SECURITY AGREEMENT Recorded Dec 16, 2021
From: VEECO INSTRUMENTS INC.
To: HSBC BANK USA, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 058533/0321 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 8, 2010
From: PRIDDY, SCOTT WAYNE; CONROY, CHAD MICHAEL
To: VEECO INSTRUMENTS INC.
Reel/Frame 024500/0714 →