High purity ytterbium, sputtering target made thereof, thin film containing the same, and method of producing the same
View Patent ↗Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium.
1. A sputtering target made of high purity ytterbium, said high purity ytterbium having a purity of 4N (99.99%) or higher excluding rare earth elements and gas components, and a content of impurities of each element of alkali metal elements and alkali earth metal elements of 50 wtppm or less.
2. The sputtering target made of the high purity ytterbium according to claim 1 , wherein the oxygen content is 200 wtppm or less.
3. A sputtered thin film comprising high purity ytterbium having a purity of 4N (99.99%) or higher excluding rare earth elements and gas components, and a content of impurities of each element of alkali metal elements and alkali earth metal elements of 50 wtppm or less.
4. A sputtered thin film comprising high purity ytterbium having a purity of 4N (99.99%) or higher excluding rare earth elements and gas components, and a content of impurities of each element of alkali metal elements and alkali earth metal elements of 50 wtppm or less, wherein an impurity oxygen content of the high purity ytterbium is 200 wtppm or less.