Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes

1. A method for the manufacture of monolithic ingots of silicon carbide having a polytype of 4H and having a diameter of 50 to 150 mm comprising:

i) introducing a mixture comprising polysilicon metal chips segregated by maximum dimension into sizes from 0.5 to 10 mm and carbon powder sifted into sizes from 5 to 125 um in an amount such that the molar ratio of polysilicon to carbon from 0.9 to 1.2 on a molar ratio basis into a first cylindrical reaction cell having a lid;

ii) sealing the cylindrical reaction cell of i);

iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace;

iv) evacuating the furnace of iii);

v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure;

vi) heating the polysilicon metal chips and the carbon powder in the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.;

vii) reducing the pressure in the furnace after vi) to less than 50 torr but not less than 0.05 torr; and

viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

2. A method according to claim 1 wherein the dimension and shape of the polysilicon metal chips and carbon powder are substantially different.

3. A method according to claim 1 wherein the polysilicon chips are segregated by maximum dimension into sizes from of 1 to 3.5 mm.

4. A method according to claim 1 wherein the polysilicon metal and carbon powder mixture occupies 35-50% of the total volume of the reaction cell.

5. A method according to claim 1 wherein the gas mixture comprises argon gas.

6. A method according to claim 1 where the reaction cell is comprised of electrically conducting graphite.

7. A method according to claim 1 wherein the reaction cell of i) has a silicon carbide seed crystal having a polytype of 4H located on the inner surface of its lid.

8. A method according to claim 1 wherein the method further comprises:

ix) introducing the product of viii) into a second cylindrical reaction cell having a silicon carbide seed crystal located on the inner surface of its lid;

x) sealing the cylindrical reaction cell of ix);

xi) introducing the cylindrical reaction cell of x) into a vacuum furnace;

xii) evacuating the furnace of xi);

xiii) filling the furnace of xii) with a gas mixture which is substantially inert gas to near atmospheric pressure;

xiv) heating the cylindrical reaction cell in the furnace of xiii) to a temperature of from 1600 to 2500° C.; and

xv) reducing the pressure in the cylindrical reaction cell of furnace after xiv) to less than 50 torr but not less than 0.05 torr; and

xvi) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of xv).

9. A method according to claim 8 wherein the cylindrical reaction cell is comprised of electrically conducting ultra high purity graphite and the silicon carbide seed crystal has a polytype of 4H.

10. A method according to claim 1 wherein the cylindrical reaction cell is comprised of electrically conducting ultra high purity graphite, the carbon powder is ultra high purity carbon powder and polysilicon chip is ultra high purity polysilicon chip.

11. A method according to claims 1 wherein the gas mixture used to refill the furnace after evacuation further comprises a doping gas.

12. A method according to claim 11 wherein the doping gas is nitrogen gas, a phosphorous containing gas, a boron containing gas or aluminum containing gas.