Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
View Patent ↗Semiconductor switching devices include a first wide band-gap semiconductor layer having a first conductivity type. First and second wide band-gap well regions that have a second conductivity type that is opposite the first conductivity type are provided on the first wide band-gap semiconductor layer. A non-wide band-gap semiconductor layer having the second conductivity type is provided on the first wide band-gap semiconductor layer. First and second wide band-gap source/drain regions that have the first conductivity type are provided on the first wide band-gap well region. A gate insulation layer is provided on the non-wide band-gap semiconductor layer, and a gate electrode is provided on the gate insulation layer.
1. A semiconductor switching device, comprising:
a first wide band-gap semiconductor layer having a first conductivity type;
a first wide band-gap well region having a second conductivity type that is opposite the first conductivity type on the first wide band-gap semiconductor layer;
a second wide band-gap well region having the second conductivity type on the first wide band-gap semiconductor layer;
a non-wide band-gap semiconductor layer having the second conductivity type on the first wide band-gap semiconductor layer;
a first wide band-gap source/drain region having the first conductivity type on the first wide band-gap well region;
a second wide band-gap source/drain region having the first conductivity type on the second wide band-gap well region;
a gate insulation layer on the non-wide band-gap semiconductor layer; and
a gate electrode on the gate insulation layer,
wherein the gate insulation layer directly contacts the first wide band-gap well region.
2. The semiconductor switching device of claim 1 , wherein the non-wide band-gap semiconductor layer is directly on the first wide band-gap semiconductor layer so as to form a heterojunction with the first wide band-gap semiconductor layer.
3. The semiconductor switching device of claim 2 , wherein the heterojunction has a first built-in potential that is lower than a second built-in potential of a homojunction formed between the first wide band-gap semiconductor layer and the first wide band-gap well region.
4. The semiconductor switching device of claim 1 , wherein the first wide band-gap semiconductor layer comprises a wide band-gap drift layer.
5. The semiconductor switching device of claim 1 , further comprising a wide band-gap current spreading layer below a bottom surface of the first wide band-gap semiconductor layer, wherein the first wide band-gap semiconductor layer comprises a wide band-gap drift layer.
6. The semiconductor switching device of claim 1 , wherein the non-wide band-gap semiconductor layer comprises a polysilicon layer.
7. The semiconductor switching device of claim 6 , wherein the first wide band-gap semiconductor layer comprises an n-type silicon carbide drift layer, wherein the first and second wide band-gap well regions comprise first and second p-type silicon carbide well regions, wherein the first and second wide band-gap source/drain regions comprise first and second n-type silicon carbide source/drain regions, and wherein the silicon layer comprises a p-type silicon layer.
8. The semiconductor switching device of claim 7 , wherein the device further comprises a silicon carbide substrate on the n-type silicon carbide drift layer opposite the first and second p-type silicon carbide well regions.
9. The semiconductor switching device of claim 8 , wherein the gate insulation layer is on a top surface of the non-wide band-gap semiconductor layer, and the gate electrode is on a top surface of the gate insulation layer.
10. The semiconductor switching device of claim 9 , wherein the silicon carbide substrate comprises an n-type silicon carbide substrate, and the semiconductor switching device comprises a silicon carbide power MOSFET.
11. The semiconductor switching device of claim 9 , wherein the silicon carbide substrate comprises a silicon carbide substrate, and the semiconductor switching device comprises a silicon carbide insulated gate bipolar junction transistor (“IGBT”).
12. The semiconductor switching device of claim 1 , further comprising a second wide band-gap semiconductor region having the second conductivity type between the first wide band-gap semiconductor layer and the non-wide band-gap semiconductor layer, wherein the second wide band-gap semiconductor region having the second conductivity type and the non-wide band-gap semiconductor layer form a heterojunction.
13. The semiconductor switching device of claim 1 , further comprising an electrical connection between the non-wide band-gap semiconductor layer and the first and second wide band-gap source/drain regions.
14. The semiconductor switching device of claim 1 , wherein a bottom surface of the first wide band-gap well region is on a top surface of the first wide band-gap semiconductor layer, and wherein a bottom surface of the gate electrode is positioned below a top surface of the first wide band-gap well region and below a top surface of the second wide band-gap well region.
15. The semiconductor switching device of claim 1 , wherein the non-wide band-gap semiconductor layer does not directly contact either the first wide band-gap well region or the second wide band-gap well region.
16. The semiconductor switching device of claim 1 , wherein the gate insulation layer is on a side surface of the first wide band-gap well region and on a side surface of the second wide band-gap well region, the semiconductor switching device further comprising a first channel that extends from a top surface of the first wide band-gap well region to the bottom surface of the first wide band-gap well region and a second channel that extends from a top surface of the second wide band-gap well region to the bottom surface of the second wide band-gap well region.
17. The semiconductor switching device of claim 1 , wherein the gate insulation layer directly contacts the first wide band-gap well region.
18. A semiconductor switching device, comprising:
a first wide band-gap semiconductor layer having a first conductivity type;
a first wide band-gap well region having a second conductivity type that is opposite the first conductivity type on a top surface of the first wide band-gap semiconductor layer;
a second wide band-gap well region having the second conductivity type on the top surface of the first wide band-gap semiconductor layer;
a non-wide band-gap semiconductor layer having the second conductivity type on or within the first wide band-gap semiconductor layer;
a first wide band-gap source/drain region having the first conductivity type on the first wide band-gap well region;
a second wide band-gap source/drain region having the first conductivity type on the second wide band-gap well region;
a gate insulation layer on the non-wide band-gap semiconductor layer; and
a gate electrode on the gate insulation layer,
wherein a top surface of the non-wide band-gap semiconductor layer is closer to a bottom surface of the first wide band-gap semiconductor layer than are bottom surfaces of the first and second wide band-gap well regions.
19. The semiconductor switching device of claim 18 , wherein the gate insulation layer is on a side surface of the first wide band-gap well region and on a side surface of the second wide band-gap well region, the semiconductor switching device further comprising a first channel that extends from a top surface of the first wide band-gap well region to the bottom surface of the first wide band-gap well region and a second channel that extends from a top surface of the second wide band-gap well region to the bottom surface of the second wide band-gap well region.
20. The semiconductor switching device of claim 18 , wherein the non-wide band-gap semiconductor layer does not directly contact either the first wide band-gap well region or the second wide band-gap well region.
21. The semiconductor switching device of claim 18 , wherein the gate insulation layer directly contacts the first wide band-gap well region.
22. The semiconductor switching device of claim 18 , further comprising a second wide band-gap region having the second conductivity type interposed between the non-wide band-gap semiconductor layer and the first wide band-gap semiconductor layer.
23. The semiconductor switching device of claim 18 , further comprising a wide band-gap current spreading layer adjacent a top surface of the first wide band-gap semiconductor layer that has a higher doping concentration than the first wide band-gap semiconductor layer.
24. A semiconductor switching device, comprising:
a first wide band-gap semiconductor layer having a first conductivity type;
a first wide band-gap well region having a second conductivity type that is opposite the first conductivity type on a top surface of the first wide band-gap semiconductor layer;
a second wide band-gap well region second conductivity type on the top surface of the first wide band-gap semiconductor layer;
a non-wide band-gap semiconductor layer having the second conductivity type on the first wide band-gap semiconductor layer,
a first wide band-gap source/drain region having the first conductivity type on the first wide band-gap well region;
a second wide band-gap source/drain region having the first conductivity type on the second wide band-gap well region;
a gate insulation layer on the non-wide band-gap semiconductor layer; and
a gate electrode on the gate insulation layer,
wherein the gate insulation layer is between the non-wide band-gap semiconductor layer and the first wide band-gap well region and between the non-wide band-gap semiconductor layer and the second wide band-gap well region, and the gate electrode is disposed within a first recess in a first portion of the gate insulation layer that is between the non-wide band-gap semiconductor layer and the first wide band-gap well region and within a second recess in a second portion of the gate insulation layer that is between the non-wide band-gap semiconductor layer and the second wide band-gap well region.
25. A method of forming a semiconductor device, comprising:
providing a first wide band-gap semiconductor layer having a first conductivity type on a substrate;
providing a second wide band-gap semiconductor layer having a second conductivity type that is opposite the first conductivity type on the first wide band-gap semiconductor layer;
providing a gate trench that penetrates the second wide band-gap semiconductor layer and a portion of the first wide band-gap semiconductor layer, wherein the gate trench divides the second wide band-gap semiconductor layer into a first wide band-gap well region and a second wide band-gap well region;
providing a first wide band-gap source/drain region having the first conductivity type on the first wide band-gap well region;
providing a second wide band-gap source/drain region having the first conductivity type on the second wide band-gap well region; and
providing a non-wide band-gap semiconductor layer having the second conductivity type in the gate trench and on the first wide band-gap semiconductor layer.
26. The method of claim 25 , wherein providing the first and second wide band-gap source/drain regions comprises forming a third wide band-gap semiconductor layer region having the first conductivity type on the second wide band-gap semiconductor layer, and dividing the third wide band-gap semiconductor layer region into the first and second wide band-gap source/drain regions by the formation of the gate trench.
27. The method of claim 25 , wherein providing the first and second wide band-gap source/drain regions comprises implanting ions having the first conductivity type into first and second upper portions of the second wide band-gap semiconductor layer.
28. The method of claim 25 , further comprising providing a gate insulation layer on sidewalls of the gate trench and on the non-wide band-gap semiconductor layer, and providing a gate electrode on the gate insulation layer.
29. The method of claim 28 , wherein the non-wide band-gap semiconductor layer is provided directly on the first wide band-gap semiconductor layer so as to form a heterojunction with the first wide band-gap semiconductor layer.
30. The method of claim 29 , wherein the non-wide band-gap semiconductor layer comprises a silicon layer.
31. The method of claim 30 , wherein the first wide band-gap semiconductor layer comprises an n-type silicon carbide drift layer or an n-type current spreading layer, wherein the first and second wide band-gap well regions comprise first and second p-type silicon carbide well regions, wherein the first and second wide band-gap source/drain regions comprise first and second n-type silicon carbide source/drain regions, and wherein the silicon layer comprises a p-type silicon layer.
32. The method of claim 31 , wherein the substrate comprises an n-type silicon carbide substrate, and the semiconductor switching device comprises a silicon carbide power MOSFET.
33. The method of claim 31 , wherein the substrate comprises a p-type silicon carbide substrate, and the semiconductor switching device comprises a power silicon carbide insulated gate bipolar junction transistor (“IGBT”).
34. The method of claim 25 , further comprising providing a third wide band-gap semiconductor region having the second conductivity type on the first wide band-gap semiconductor layer prior to providing the non-wide band-gap semiconductor layer, wherein the non-wide band-gap semiconductor layer is on the third wide band-gap semiconductor region, and wherein the third wide band-gap semiconductor region and the non-wide band-gap semiconductor layer form a heterojunction.
35. The method of claim 25 , further comprising providing an electrical connection between the non-wide band-gap semiconductor layer and the first and second wide band-gap source/drain regions.
36. A semiconductor device, comprising:
a first wide band-gap semiconductor layer;
a gate insulation layer on the first wide band-gap semiconductor layer;
a gate electrode adjacent the gate insulation layer;
a non-wide band-gap semiconductor pattern that is on the first wide band-gap semiconductor layer;
a first wide band-gap semiconductor well region having the second conductivity type on a top surface of the first wide band-gap semiconductor layer, the first wide band-gap semiconductor well region including a first channel region therein; and
a second wide band-gap semiconductor well region having the second conductivity type on the top surface of the first wide band-gap semiconductor layer, the second wide band-gap semiconductor well region including a second channel region therein,
wherein a bottom surface of the non-wide band-gap semiconductor pattern is closer to a bottom surface of the first wide band-gap semiconductor layer than are the first and second channel regions.
37. The semiconductor device of claim 36 , wherein the non-wide band-gap semiconductor pattern is directly on the first wide band-gap semiconductor layer so as to form a heterojunction with the first wide band-gap semiconductor layer.
38. The semiconductor device of claim 37 , wherein the gate electrode includes opposed sidewalls, and wherein at least a portion of the non-wide band-gap semiconductor pattern is between the opposed sidewalls of the gate electrode.
39. The semiconductor device of claim 37 , wherein the gate electrode is at least partially positioned within a gate trench that extends below a top surface of the first wide band-gap semiconductor well region and below a top surface of the second wide band-gap semiconductor well region so that a bottom portion of the gate electrode is positioned in a bottom portion of the gate trench between the first and second wide band-gap semiconductor well regions, and wherein the non-wide band-gap semiconductor pattern is positioned between the bottom portion of the gate electrode and the first wide band-gap semiconductor layer.
40. The semiconductor device of claim 36 , wherein the first wide band-gap semiconductor layer has a first conductivity type, and wherein the non-wide band-gap semiconductor pattern has a second conductivity type that is different from the first conductivity type.
41. The semiconductor device of claim 40 , further comprising a wide band-gap semiconductor pattern having the second conductivity type between at least a portion of the first wide band-gap semiconductor layer and the non-wide band-gap semiconductor pattern, wherein the second wide band-gap semiconductor pattern and the non-wide band-gap semiconductor pattern form a heterojunction, wherein wide band-gap semiconductor pattern having the second conductivity type is positioned closer to the bottom surface of the first wide band-gap semiconductor layer than are the first and second wide band-gap semiconductor well regions.
42. The semiconductor device of claim 40 , further comprising:
a first wide band-gap semiconductor source/drain region having the first conductivity type on the first wide band-gap semiconductor well region; and
a second wide band-gap semiconductor source/drain region having the first conductivity type on the second wide band-gap semiconductor well region.
43. The semiconductor device of claim 42 , further comprising an electrical connection between the non-wide band-gap semiconductor pattern and the first and second wide band-gap semiconductor source/drain regions.
44. The semiconductor switching device of claim 36 , wherein the non-wide band-gap semiconductor pattern comprises a silicon pattern, and wherein the first wide band-gap semiconductor layer comprises a silicon carbide layer.
45. The semiconductor switching device of claim 36 , wherein a bottom surface of the non-wide band-gap semiconductor layer is closer to a bottom surface of the first wide band-gap semiconductor layer than is a bottom surface of the first wide band-gap well region.
46. The semiconductor switching device of claim 36 , wherein the first wide band-gap well region is on a top surface of the first wide band-gap semiconductor layer and the gate insulating layer is on a side surface of the first wide band-gap well region and on a side surface of the second wide band-gap well region, the semiconductor switching device further comprising a first channel that extends from a top surface of the first wide band-gap well region to the bottom surface of the first wide band-gap well region and a second channel that extends from a top surface of the second wide band-gap well region to the bottom surface of the second wide band-gap well region.
47. The semiconductor switching device of claim 36 , wherein the gate insulation layer directly contacts the first wide band-gap well region.
48. The semiconductor switching device of claim 36 , wherein a bottom surface of the non-wide band-gap semiconductor layer is closer to a bottom surface of the first wide band-gap semiconductor layer than is a bottom surface of the first wide band-gap well region.
49. The semiconductor device of claim 36 , wherein the non-wide band-gap semiconductor pattern that is between the first wide band-gap semiconductor layer and at least a portion of the gate insulation layer.