Forming self-aligned conductive lines for resistive random access memories
View Patent ↗Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.
1. A method comprising:
defining a plurality of electrodes over a semiconductor substrate;
separating the plurality of electrodes with a first dielectric material;
forming a heater layer over the plurality of electrodes and first dielectric material;
forming a resistive switching material layer over the heater layer;
forming an upper electrode layer over the heater layer;
forming a second dielectric material over the upper electrode layer;
forming a plurality of trenches through the second dielectric material to the upper electrode layer;
forming a conformal barrier layer in the plurality of trenches;
depositing a plurality of metal conductive lines in the plurality of trenches over the conformal barrier layer; and
using the plurality of metal conductive lines as a mask, dry etching through the second dielectric material, upper electrode layer, resistive switching material layer, and heater layer to define individual resistive random access memory elements.
2. The method of claim 1 , wherein the resistive switching material layer comprises a phase change material.
3. The method of claim 2 , wherein the phase change material comprises chalcogenide.
4. The method of claim 1 , further comprising sealing the individual resistive random access memory elements with a third dielectric material.
5. The method of claim 1 , wherein the plurality of metal conductive lines comprise copper.
6. The method of claim 1 , further comprising forming a seed layer over the conformal barrier layer.
7. The method of claim 1 wherein the dry etching comprises blanket etching using an etchant that is selective to the plurality of metal conductive lines.
8. The method of claim 1 , wherein the plurality of metal conductive lines comprises copper.
9. An apparatus comprising:
a plurality of spaced metal conductive lines; and
a plurality of memory elements disposed below said plurality of spaced metal conductive lines, each of said plurality of memory elements being self-aligned to a spaced metal conductive line of said plurality of spaced metal conductive lines, wherein each of the plurality of memory elements includes a resistive switching material;
a plurality of first electrodes arranged between the plurality of memory elements and the plurality of spaced metal conductive lines;
a plurality of heaters arranged below the plurality of memory elements;
a plurality of second electrodes arranged below the plurality of heaters; and
a barrier layer arranged between the plurality of metal conductive lines and the plurality of first electrodes, wherein the barrier layer is further arranged to contact two vertical parallel sides of each of the plurality of metal conductive lines, said barrier layer being conductive.
10. The apparatus of claim 9 wherein said resistive switching material comprises at least one of germanium, antimony, and tellurium.
11. The apparatus of claim 9 wherein said resistive switching material comprises at least one of a silver charge transfer complex, SrZrO 3 , or PrO 7 CaO 3 .
12. The apparatus of claim 9 wherein said plurality of metal conductive lines are bit lines included in a memory array.
13. The apparatus of claim 9 wherein said metal conductive lines comprise copper.
14. The apparatus of claim 9 wherein said resistive switching material includes a chalcogenide.
15. The apparatus of claim 9 , wherein the plurality of second electrodes are couples to a plurality of select devices of a memory array.
16. A method comprising:
forming a stack of layers, wherein the stack of layers includes:
a first layer including a plurality of electrodes in a dielectric material;
a heater layer over the first layer;
a phase change memory material layer over the heater layer;
a second electrode layer over the phase change memory material layer;
a barrier layer over the second electrode layer;
forming a first plurality of trenches and a second plurality of trenches in the barrier layer of the stack of layers, wherein trenches of the first plurality of trenches are spaced from each other by trenches of the second plurality of trenches;
filling the first set of trenches with a dielectric material;
filling the second set of trenches with metal conductive lines; and
using said metal conductive lines as a mask, dry etching said stack of layers to form a plurality of stacks separated by spaced trenches.
17. The method of claim 16 wherein the spaced trenches extend from the metal conductive liens to the dielectric material of the first layer, wherein the plurality of electrodes of the first layer are aligned under the heater layer of the plurality of stacks.
18. The method of claim 16 further comprising depositing a sealing material over the plurality of stacks and spaced trenches.
19. The method of claim 17 , wherein the spaced trenches extend into the dielectric material of the first layer.