SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Provided is the method for manufacturing the semiconductor device including: providing a film (organic silicon polymer film) containing a silane compound and a porogen on a substrate; providing a hole (interconnect trench) in the organic silicon polymer film using a selective etching process and providing a metallic film (barrier film and copper interconnect) in the inside of the interconnect trench; and conducting a radiation with ultraviolet over the organic silicon polymer film within an atmosphere of a reducing gas while the film is heated at a temperature of not lower than a boiling point or a decomposition temperature of the porogen to obtain a microporous film.
1 . A method for manufacturing a semiconductor device, comprising:
providing a film containing a silane compound and a porogen over a substrate;
forming a hole in said film using a selective etching process and forming a metallic film in the inside of said hole: and
conducting a radiation with ultraviolet over said film within an atmosphere of a reducing gas while the film is heated at a temperature to obtain a microporous film, said temperature being not lower than a boiling point or a decomposition temperature of said porogen.
2 . The method for manufacturing the semiconductor device as set forth in claim 1 , wherein said reducing gas is a gas containing Si or H.
3 . The method for manufacturing the semiconductor device as set forth in claim 1 , wherein said reducing gas is a gas containing at least one selected from a group consisting of a hydrocarbon, a siloxane, an organosilane and a hydrogen.
4 . The method for manufacturing the semiconductor device as set forth in claim 3 , wherein said siloxane contains a cyclosiloxane or a methylsiloxane.
5 . The method for manufacturing the semiconductor device as set forth in claim 4 , wherein said cyclosiloxane contains a tetramethyl cyclotetrasiloxane having an organosilane group or an octamethylcyclotetrasiloxane.
6 . The method for manufacturing the semiconductor device as set forth in claim 4 , wherein said methylsiloxane contains at least one selected from a group consisting of a dimethyl dihydroxy silyl cyclohexane, a dimethyl dimethoxy silane, a diethyl methoxy silane and a methyl triethylsilane.
7 . The method for manufacturing the semiconductor device as set forth in claim 3 , wherein said organosilane contains at least one selected from a group consisting of a trimethylsilane, a tetramethylsilane, a trimethylsilyl dimethylamine and a hexamethyldisilazane.
8 . The method for manufacturing the semiconductor device as set forth in claim 1 , wherein said porogen contains C or H.
9 . A semiconductor device, comprising:
a substrate;
a microporous film provided over said substrate;
a hole provided in said microporous film; and
a metallic film provided in the inside of said hole,
wherein a stress in said microporous film in vicinity of said metallic film is a compressive stress.
10 . The semiconductor device as set forth in claim 9 , wherein said microporous film is a film containing Si, O and C as constituent elements, or a film containing Si, O, C and H as constituent elements.
11 . The semiconductor device as set forth in claim 9 , wherein said microporous film contains Si and O.