Method of manufacturing semiconductor device and semiconductor device
A method of manufacturing a semiconductor device includes: forming a gate insulating film over a semiconductor substrate; forming a mask that has an opening at a position corresponding to the gate insulating film formed in an NMOSFET forming region and covers the gate insulating film; forming a first metal layer over the gate insulating film disposed in the NMOSFET forming region and the mask formed in a PMOSFET forming region; and performing a heat treatment to thermally diffuse a metal material forming the first metal layer into the gate insulating film formed in the NMOSFET forming region.
1. A method of manufacturing a semiconductor device including a first-conduction-type MOSFET and a second-conduction-type MOSFET over a semiconductor substrate, comprising:
forming a gate insulating film in a first-conduction-type MOSFET forming region and a second-conduction-type MOSFET forming region of said semiconductor substrate;
forming a hard mask that has an opening at a position corresponding to said gate insulating film formed in said first-conduction-type MOSFET forming region and covers said gate insulating film formed in said second-conduction-type MOSFET forming region;
forming a first metal layer over said gate insulating film disposed in said first-conduction-type MOSFET forming region and said hard mask formed in said second-conduction-type MOSFET forming region;
performing a heat treatment to thermally diffuse a metal material forming said first metal layer into said gate insulating film formed in said first-conduction-type MOSFET forming region;
removing said remaining first metal layer from said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
removing said hard mask from said second-conduction-type MOSFET forming region;
forming a second metal layer that is made of a metal material different from that forming said first metal layer over said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region of said semiconductor substrate, said second metal layer being part of gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET; and
forming a silicon layer over said second metal layer, said silicon layer being part of said gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET,
wherein said forming said gate insulating film includes:
forming a first insulating film; and
forming a second insulating film with a dielectric constant greater than that of said first insulating film,
wherein said forming said hard mask includes:
forming a film that is made of the same material as that forming said hard mask over the entire surface of said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
forming a resist so as to cover the entire surface of said film;
forming an opening in said resist in said first-conduction-type MOSFET forming region to expose said film;
removing said film exposed from said opening of said resist to expose said gate insulating film in said first-conduction-type MOSFET forming region; and
removing said resist using a wet process.
2. The method of manufacturing a semiconductor device according to claim 1 ,
wherein said mask is made of at least one selected from a group including SiO 2 , a silicon nitride film, and amorphous carbon.
3. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a silicon oxynitride film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region of said semiconductor substrate before said forming said gate insulating film.
4. The method of manufacturing a semiconductor device according to claim 1 ,
wherein said first-conduction-type MOSFET is an NMOSFET,
said second-conduction-type MOSFET is a PMOSFET, and
said first metal film is made of at least one selected from a group including La, Dy, La 2 O 3 , and Dy 2 O 3 .
5. The method of manufacturing a semiconductor device according to claim 1 ,
wherein said gate insulating film is made of HfO 2 or ZrO 2 .
6. The method of manufacturing a semiconductor device according to claim 1 ,
wherein said second metal layer is made of at least one selected from a group including TiN, W, TaN, TaSiN, Ru, TiAl, and Al.
7. A method of manufacturing a semiconductor device including a first-conduction-type MOSFET and a second-conduction-type MOSFET over a semiconductor substrate, comprising:
forming a gate insulating film in a first-conduction-type MOSFET forming region and a second-conduction-type MOSFET forming region of said semiconductor substrate;
forming a hard mask that has an opening at a position corresponding to said gate insulating film formed in said first-conduction-type MOSFET forming region and covers said gate insulating film formed in said second-conduction-type MOSFET forming region;
forming a first metal layer over said gate insulating film disposed in said first-conduction-type MOSFET forming region and said hard mask formed in said second-conduction-type MOSFET forming region;
performing a heat treatment to thermally diffuse a metal material forming said first metal layer into said gate insulating film formed in said first-conduction-type MOSFET forming region;
removing a remainder of said first metal layer from said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
removing said hard mask from said second-conduction-type MOSFET forming region;
forming a second metal layer that is made of a metal material different from that forming said first metal layer over said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region of said semiconductor substrate, said second metal layer being part of gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET, wherein said second metal layer is made of at least one metal selected from a group including TiN, W, TaN, TaSiN, Ru, TiAl, and Al; and
forming a silicon layer over said second metal layer, said silicon layer being part of said gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET,
wherein said forming said gate insulating film includes:
forming a first insulating film; and
forming a second insulating film with a dielectric constant greater than that of said first insulating film,
wherein said forming said hard mask includes:
forming a film that is made of the same material as that forming said hard mask over the entire surface of said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
forming a resist so as to cover the entire surface of said film;
forming an opening in said resist in said first-conduction-type MOSFET forming region to expose said film;
removing said film exposed from said opening of said resist to expose said gate insulating film in said first-conduction-type MOSFET forming region; and
removing said resist using a wet process.
8. The method of manufacturing a semiconductor device according to claim 7 ,
wherein said first-conduction-type MOSFET is an NMOSFET,
said second-conduction-type MOSFET is a PMOSFET, and
said first metal film is made of at least one selected from a group including La, Dy, La 2 O 3 , and Dy 2 O 3 .
9. The method of manufacturing a semiconductor device according to claim 7 ,
wherein said gate insulating film is made of HfO 2 or ZrO 2 .