Granted Patent B2

US 8,008,134 · App. 12/798,874 · Granted Aug 30, 2011

Abstract

Claims (31)

1. A method for forming an electronic package, comprising:

providing a carrier substrate having first and second surfaces;

forming in the carrier substrate a plurality of vias extending from the first surface;

forming a first conducting layer having a length and a width extending laterally in two dimensions across a major part of the first surface of the carrier substrate; and

depositing at least one via material into the vias to connect the plural via materials to the first conducting layer and secure the first conducting layer to the carrier substrate, wherein a void inside the vias remains unfilled by the via materials.

2. The method of claim 1 , wherein depositing comprises forming the via materials which extend to the second surface.

3. The method of claim 1 , further comprising:

forming a second conducting layer on the second surface of the carrier substrate such that a part of the via materials connect to the second conducting layer.

4. A method for forming an electronic package, comprising:

providing a carrier substrate having first and second surfaces;

forming in the carrier substrate a plurality of vias extending from the first surface;

forming a first conducting layer having a length and a width extending laterally in two dimensions across a major part of the first surface of the carrier substrate;

depositing at least one via material into the vias to connect the plural via materials to the first conducting layer and secure the first conducting layer to the carrier substrate; and

depositing a dielectric layer between the carrier substrate and the first conducting layer.

5. The method of claim 4 , wherein forming a first conducting layer includes forming a set of first conducting layers on the first surface of the substrate, and wherein depositing a dielectric layer includes depositing plural dielectric layers disposed between respective ones of the set of conducting layers to electrically isolate the respective ones of the first conducting layers from each other.

6. The method of claim 4 , further comprising:

placing a masking plate over at least one of the vias.

7. The method of claim 6 , further comprising:

etching at least a via conductor formed in the at least one of the vias to smooth an edge of the via conductor.

8. The method of claim 7 , wherein forming a first conducting layer includes forming a first set of conducting layers on the first surface of the substrate, and wherein depositing at least one via material comprises depositing a first via conductor in one of the vias to connect to at least one conducting layer of the first set of conducting layers.

9. The method of claim 1 , wherein forming a first conducting layer comprises forming the first conducting layer across at least 10% of an entirety of a surface area of the carrier substrate.

10. The method of claim 1 , wherein forming a first conducting layer comprises forming the first conducting layer across at least 20% of an entirety of a surface area of the carrier substrate.

11. The method of claim 1 , wherein forming a first conducting layer comprises forming the first conducting layer across at least 90% of an entirety of a surface area of the carrier substrate.

12. A method for reducing thermal fatigue failure due to heat cycling in an electronic package, comprising:

thermal cycling a conducting layer on a carrier substrate that extends laterally in two dimensions across a major part of a surface of the carrier substrate; and

securing the conducting layer to the carrier substrate by plural via materials disposed in plural vias, extending into the carrier substrate, and connecting the conducing layer to the carrier substrate at multiple attachments along the two dimensions.

13. The method of claim 12 , wherein securing the conducting layer comprises securing the conducting layer across at least 10% of an entirety of a surface area of the carrier substrate.

14. The method of claim 12 , wherein securing the conducting layer comprises securing the conducting layer across at least 20% of an entirety of a surface area of the carrier substrate.

15. The method of claim 12 , wherein securing the conducting layer comprises securing the conducting layer across at least 90% of an entirety of a surface area of the carrier substrate.

16. The method of claim 4 , wherein a void inside the vias remains unfilled by the via materials.

17. The method of claim 12 , wherein a void inside the vias remains unfilled by the via materials.

Assignments (11)