Blind via capture pad structure fabrication method

1. A method of forming a capture pad structure comprising:

laser ablating a first dielectric layer to form a plurality of linear channels therein;

filling the linear channels with an electrically conductive material to form a capture pad embedded within the first dielectric layer;

mounting a second dielectric layer to the first dielectric layer;

laser ablating a blind via aperture through the second dielectric layer and to the capture pad comprising laser ablating completely through the second dielectric layer and partially laser ablating the first dielectric layer around the capture pad; and

forming a blind via in the blind via aperture, the blind via being electrically coupled to the capture pad, wherein the blind via comprise an interlocking structure extending around the capture pad.

2. The method of claim 1 wherein the laser ablating a first dielectric layer to form a plurality of linear channels therein comprises moving a focused laser beam in straight lines to form the plurality of linear channels.

3. The method of claim 2 wherein the linear channels have a uniform width equal to a width of the focused laser beam.

4. The method of claim 1 wherein the capture pad comprises a plurality of linear segments comprising a first linear segment and a second linear segment in a star configuration.

5. The method of claim 1 wherein the filling the linear channels with an electrically conductive material further comprises forming a trace embedded within the first dielectric layer.

6. The method of claim 1 wherein the mounting a second dielectric layer comprises adhesively bonding a first surface of the second dielectric layer to a first surface of the first dielectric layer.

7. The method of claim 1 wherein the mounting a second dielectric layer comprises:

applying the second dielectric layer in a liquid form; and

curing the second dielectric layer.

8. The method of claim 1 wherein the blind via aperture is defined by a blind via aperture sidewall extending between a first surface of the second dielectric layer and a second surface of the second dielectric layer, the forming a blind via comprising plating an electrically conductive material on the blind via aperture sidewall and on the capture pad.

9. The method of claim 8 wherein the blind via comprises a space therein.

10. The method of claim 9 further comprising filling the space with an electrically conductive material.

11. The method of claim 1 further comprising:

mounting an inactive surface of an electronic component to the second dielectric layer; and

forming a bond wire to electrically connect a bond pad on an active surface of the electronic component with the blind via.

12. The method of claim 1 further comprising forming a flip chip bump between a bond pad on an active surface of an electronic component and the blind via.

13. A method of forming a capture pad structure comprising:

laser ablating a first dielectric layer to form a plurality of linear channels therein;

filling the linear channels with an electrically conductive material to form a capture pad embedded within the first dielectric layer, wherein the capture pad comprises:

a first surface coplanar with a first surface of the first dielectric layer;

a second surface within the first dielectric layer; and

sidewalls extending between the first surface of the capture pad and the second surface of the capture pad;

mounting a second dielectric layer to the first dielectric layer;

laser ablating a blind via aperture through the second dielectric layer and to the capture pad, wherein the laser ablating a blind via aperture further comprises laser ablating into the first dielectric layer around the capture pad, wherein a portion of the sidewalls of the capture pad is exposed by the blind via aperture; and

forming a blind via in the blind via aperture, the blind via being electrically coupled to the capture pad, wherein the forming a blind via further comprises forming an interlocking structure of the blind via to contact the portion of the sidewalls.

14. A method of forming a capture pad structure comprising:

laser ablating a first dielectric layer to form a plurality of linear channels therein;

filling the linear channels with an electrically conductive material to form a capture pad embedded within the first dielectric layer;

mounting a second dielectric layer to the first dielectric layer;

laser ablating a blind via aperture through the second dielectric layer and to the capture pad, wherein the laser ablating a blind via aperture further comprises over drilling into the first dielectric layer around the capture pad; and

forming a blind via in the blind via aperture, the blind via being electrically coupled to the capture pad.

15. The method of claim 14 wherein the over drilling comprises selectively removing the first dielectric layer relative to the capture pad.

16. A method of forming a capture pad structure comprising:

laser ablating a first dielectric layer to form a plurality of linear channels therein;

filling the linear channels with an electrically conductive material to form a capture pad embedded within the first dielectric layer;

mounting a second dielectric layer to the first dielectric layer;

laser ablating a blind via aperture through the second dielectric layer and into the first dielectric layer around the capture pad; and

forming a blind via in the blind via aperture, the blind via comprising an interlocking structure extending around the capture pad.

17. The method of claim 16 wherein the capture pad comprises:

a first surface coplanar with a first surface of the first dielectric layer;

a second surface within the first dielectric layer; and

sidewalls extending between the first surface of the capture pad and the second surface of the capture pad;

wherein a portion of the sidewalls of the capture pad is exposed by the blind via aperture; and

wherein the interlocking structure contacts the portion of the sidewalls.

18. A method of forming a capture pad structure comprising:

forming a capture pad embedded within a first dielectric layer, the capture pad comprising:

a first surface coplanar with a first surface of the first dielectric layer;

a second surface within the first dielectric layer; and

sidewalls extending between the first surface and the second surface;

mounting a second dielectric layer to the first dielectric layer;

laser ablating a blind via aperture through the second dielectric layer and into the first dielectric layer to expose a first portion of the sidewalls of the capture pad; and

forming a blind via in the blind via aperture, the blind via comprising an interlocking structure contacting the first portion of the sidewalls of the capture pad.

19. The method of claim 18 wherein a second portion of the sidewalls of the capture pad remain embedded within and in contact with the first dielectric layer.