Method of manufacturing a semiconductor device
View Patent ↗A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl 4 and NH 3 reacting with TiCl 4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl 4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H 2 to the wafer, the first step and the second step being performed in this order.
1. A method of manufacturing a semiconductor device for forming a metal film, the method comprising:
forming a metal intermediate film on a substrate by supplying a Cl-containing metal compound and a reactive gas reacting with the Cl-containing metal compound to the substrate and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of the Cl-containing metal compound, and
substituting the bonding branch contained in the metal intermediate film by supplying H 2 to the substrate, the substituting of the bonding branch being performed in order after formation of the metal intermediate film.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the processing condition is any one of a substrate heating temperature, a reactive gas supply amount, and a reactive gas supply time period.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the Cl-containing metal compound is TiCl 4 ; the reactive gas is NH 3 ; and the metal film is a TiN.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the metal intermediate film is formed by alternately supplying the Cl-containing metal compound and the reactive gas in the forming a metal intermediate film.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein the metal intermediate film is formed by supplying the Cl-containing metal compound and the reactive gas to a substrate at a timing such that the Cl-containing metal compound and the reactive gas exist on the substrate substantially simultaneously.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein the substrate heating temperatures in the forming a metal intermediate film and the substituting the bonding branch are different from each other.
7. The method of manufacturing a semiconductor device according to claim 1 , wherein the forming a metal intermediate film and the substituting the bonding branch are performed in an identical processing chamber.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein the forming a metal intermediate film and the substituting the bonding branch are performed in different processing chambers.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein H 2 is activated by using any one of plasma, an electron beam, and a filament electrode.
10. The method of manufacturing a semiconductor device according to claim 1 , wherein the process of forming the metal intermediate film and substituting the bonding branch after formation of the metal intermediate film is repeated until a metal film thickness becomes a predetermined film thickness.
11. The method of manufacturing a semiconductor device according to claim 4 , wherein the metal intermediate film is formed by alternately supplying the Cl-containing metal compound and the reactive gas at a timing such that the Cl-containing metal compound and the reactive gas exist on a substrate substantially simultaneously.
12. The method of manufacturing a semiconductor device according to claim 4 , wherein the metal intermediate film is formed by alternately supplying the Cl-containing metal compound and the reactive gas to a substrate such that the Cl-containing metal compound and the reactive gas are substantially simultaneously present on the substrate.