IP Library Granted Patent US 8,608,373
Granted Patent B2
US 8,608,373 · App. 12/806,364 · Granted Dec 17, 2013

Softening point measuring apparatus and thermal conductivity measuring apparatus

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Quick Facts
Patent No.
US 8,608,373
App. No.
12/806,364
Granted
Dec 17, 2013
Kind
B2
Abstract

In a local softening point measuring apparatus and thermal conductivity measuring apparatus using a probe microscope as a base, environment of the prob ˜ and a sample surface is set to 1/100 atmospheric pressure (103 Pa) or lower. Otherwise, a side surface of the probe is coated with a thermal insulation material having a thickness that enables thermal dissipation to be reduced to 1/100 or lower, to thereby reduce the thermal dissipation from the side surface of the probe, and exchange heat substantially only at the contacting portion between the probe and the sample surface.

Claims (45)

1. A softening point measuring apparatus using a probe microscope as a base,

the softening point measuring apparatus comprising:

a cantilever including a probe at a tip thereof and a heat generating portion at a vicinity of the probe;

a voltage applying unit for applying a voltage to the heat generating portion;

a displacement detection unit for detecting a displacement of the cantilever;

a sample moving unit for moving a sample;

a vacuum chamber in which the probe and the sample are disposed; and

a vacuum pumping unit for the vacuum chamber, wherein:

the heat generating portion is heated for heating the probe so as to heat a contacting portion with the sample locally for detecting a flection amount of the cantilever so as to measure a softening point of the sample; and

an ambient environment of the probe and the sample is 1/100 atmospheric pressure (10 3 Pa) or lower.

2. A softening point measuring apparatus using a probe microscope as a base,

the softening point measuring apparatus comprising:

a cantilever including a probe at a tip thereof and a heat generating portion at a vicinity of the probe;

a voltage applying unit for applying a voltage to the heat generating portion;

a displacement detection unit for detecting a displacement of the cantilever;

a sample moving unit for moving a sample; and

a chamber in which the probe and the sample are disposed, wherein:

the heat generating portion is heated for heating the probe so as to heat a contacting portion with the sample locally for detecting a flection amount of the cantilever so as to measure a softening point of the sample; and

the probe includes a thermal insulation material provided so as to cover a side surface thereof, to thereby reduce thermal dissipation from the side surface of the probe to 1/100 or less in heat quantity compared with a case where the thermal insulation material is not provided.

3. A softening point measuring apparatus according to claim 2 , wherein the thermal insulation material has a thickness of at least approximately 100 times a thickness of a natural oxide film that is formed on the side surface of the probe in atmosphere.

4. A softening point measuring apparatus according to claim 3 , wherein the thermal insulation material comprises a film made of SiO 2 , having a thickness of at least approximately 240 nm coating the probe.

5. A thermal conductivity measuring apparatus using a probe microscope for measuring thermal conduction of a sample as a base,

the thermal conductivity measuring apparatus comprising:

a cantilever including a probe at a tip thereof and a heat generating portion at a vicinity of the probe;

a voltage applying unit for applying a voltage to the heat generating portion;

a displacement detection unit for detecting a displacement of the cantilever;

a sample moving unit for moving the sample;

a vacuum chamber in which the probe and the sample are disposed; and

a vacuum pumping unit for the vacuum chamber, wherein:

the thermal conductivity measuring apparatus performs measuring of the thermal conduction of a surface of the sample via a contacting portion between the sample and the probe by measuring a resistance variation in the heat generating portion and detecting a temperature variation of the cantilever as a variation of a resistance value; and

an ambient environment of the probe and the sample is 1/100 atmospheric pressure (10 3 Pa) or lower.

6. A thermal conductivity measuring apparatus according to claim 5 , further comprising a heating and cooling unit for the sample.

7. A thermal conductivity measuring apparatus using a probe microscope as a base, the thermal conductivity measuring apparatus comprising:

a cantilever including a probe at a tip thereof and a heat generating portion at a vicinity of the probe;

a voltage applying unit for applying a voltage to the heat generating portion;

a displacement detection unit for detecting a displacement of the cantilever;

a sample moving unit for moving a sample; and

a chamber in which the probe and the sample are disposed, wherein:

the thermal conductivity measuring apparatus performs measuring of thermal conduction of a surface of, the sample via a contacting portion between the sample and the probe by measuring a resistance variation in the heat generating portion and detecting a temperature variation of the cantilever as a variation of a resistance value; and

the probe includes a thermal insulation material provided so as to cover a side surface thereof, to thereby reduce thermal dissipation from the side surface of the probe to 1/100 or less in heat quantity compared with a case where the thermal insulation material is not provided.

8. A thermal conductivity measuring apparatus according to claim 7 , further comprising a heating and cooling unit for the sample.

9. A thermal conductivity measuring apparatus according to claim 7 , wherein the thermal insulation material has a thickness of at least approximately 100 times a thickness of a natural oxide film that is formed on the side surface of the probe in atmosphere.

10. A thermal conductivity measuring apparatus according to claim 9 , further comprising a heating and cooling unit for the sample.

11. A thermal conductivity measuring apparatus according to claim 9 , wherein the thermal insulation material comprises a film made of SiO 2 , having a thickness of at least approximately 240 nm coating the probe.

12. A thermal conductivity measuring apparatus according to claim 11 , further comprising a heating and cooling unit for the sample.

Assignments (2)
CHANGE OF NAME Recorded Sep 25, 2014
From: SII NANOTECHNOLOGY INC.
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 033817/0078 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2010
From: ANDO, KAZUNORI; IWASA, MASAYUKI; SHIGENO, MASATSUGU; MOMOTA, HIROUMI; WATANABE, KAZUTOSHI
To: SII NANOTECHNOLOGY INC.
Reel/Frame 025136/0522 →