IP Library Granted Patent US 8,313,947
Granted Patent B2
US 8,313,947 · App. 12/818,536 · Granted Nov 20, 2012

Method for testing a contact structure

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Quick Facts
Patent No.
US 8,313,947
App. No.
12/818,536
Granted
Nov 20, 2012
Kind
B2
Abstract

A method of testing a contact structure including exposing a gold layer of at least one contact structure of a support structure to a solution including glacial acetic acid and nitric acid; and determining a porosity of the gold layer of at least one contact structure after the exposing.

Claims (39)

1. A method of testing a contact structure, the method comprising:

exposing a gold layer of at least one contact structure of a package substrate to a solution including glacial acetic acid and nitric acid; and

determining a porosity of the gold layer of at least one contact structure after the exposing.

2. The method of claim 1 further comprising:

rinsing the gold layer of the at least one contact structure after the exposing;

wherein the determining a porosity is performed after the rinsing.

3. The method of claim 2 wherein the rinsing includes rinsing with deionized water.

4. The method of claim 2 wherein the rinsing includes rinsing with a cleaning agent.

5. The method of claim 4 wherein the cleaning agent includes acetone.

6. The method of claim 1 further comprising:

after the exposing, drying the gold layer of the at least one contact structure with an inert gas, wherein the determining occurs after the drying.

7. The method of claim 1 wherein the exposing is performed for less than 30 minutes.

8. The method of claim 1 wherein each of the at least one contact structure includes a layer including nickel underneath the gold layer of the contact structure.

9. The method of claim 1 , wherein the solution includes glacial acetic acid and nitric acid in a 1:1 ratio.

10. A method of making an electronic assembly comprising:

selecting a package substrate from a plurality of package substrates for testing;

exposing a gold layer of at least one contact structure of the package substrate to a solution including glacial acetic acid and nitric acid, wherein the solution;

determining a porosity of the gold layer of at least one contact structure after the exposing;

determining to use a second support substrate of the plurality of package substrates to make an electronic assembly, wherein the determining to use is based at least on the determined porosity of the gold layer of the at least one contact structure; and

making an electronic assembly with the second package substrate.

11. The method of claim 10 wherein the making the electronic assembly includes attaching a semiconductor die to the second package substrate, wherein the attaching includes electrically coupling a conductive structure of the semiconductor die to a contact structure of the second package substrate.

12. The method of claim 10 wherein each of the at least one contact structure includes a layer including nickel underneath the gold layer of the contact structure.

13. The method of claim 10 further comprising:

rinsing the gold layer of the at least one contact structure after the exposing;

wherein the determining a porosity is performed after the rinsing.

14. The method of claim 13 wherein the rinsing includes rinsing with deionized water.

15. The method of claim 13 wherein the rinsing includes rinsing with a cleaning agent.

16. The method of claim 15 wherein the cleaning agent includes acetone.

17. The method of claim 10 further comprising:

after the exposing, drying the gold layer of the at least one contact structure with an inert gas, wherein the determining a porosity occurs after the drying.

18. The method of claim 10 wherein the exposing is performed for less than 30 minutes.

19. The method of claim 10 wherein the plurality of support structures are manufactured using the same processes.

20. The method of claim 10 , wherein the solution includes glacial acetic acid and nitric acid in a 1:1 ratio.

21. A method of testing a contact structure, the method comprising:

exposing a gold layer of at least one contact structure of a package substrate to a solution including glacial acetic acid and nitric acid, wherein the solution includes glacial acetic acid and nitric acid in a 1:1 ratio;

rinsing the gold layer of the at least one contact structure with a cleaning agent after the exposing;

drying the gold layer of the at least one contact structure with an inert gas after the rinsing; and

determining a porosity of the gold layer of at least one contact structure after the drying.

22. The method of claim 21 wherein each of the at least one contact structure includes a layer including nickel underneath the gold layer of the contact structure.

Assignments (21)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
MERGER Recorded Jan 3, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041144/0363 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0477 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0075 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027621/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2010
From: HEGDE, RAMA I.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 024559/0213 →