Photomask blank and photomask making method
View Patent ↗A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
1. A photomask blank from which is produced a photomask comprising a transparent substrate and a mask pattern formed thereon including transparent regions and effectively opaque regions to exposure light, said photomask blank comprising:
a transparent substrate;
a light-shielding film having a single layer structure or a multilayer structure, said light-shielding film disposed on the substrate, optionally with another film intervening therebetween, said light-shielding film consisting essentially of a metal or metal compound susceptible to fluorine dry etching, and said metal and metal compound being selected from the group consisting of silicon alone, a silicon compound comprising silicon and at least one element selected from the group consisting of oxygen, nitrogen and carbon, and a material comprising a transition metal and silicon;
an etching mask film contiguously laminated on said light-shielding film, said etching mask film consisting essentially of a metal or metal compound resistant to fluorine dry etching, and said metal or metal compound being selected from the group consisting of chromium alone, a chromium compound comprising chromium and at least one element selected from the group consisting of oxygen, nitrogen and carbon, and free of silicon, tantalum alone, and a tantalum compound comprising tantalum and free of silicon; and
an antireflective film contiguously laminated on said etching mask film, said antireflective film consisting essentially of a metal or metal compound selected from the group consisting of chromium alone, and a chromium compound comprising chromium and at least one element selected from the group consisting of oxygen, nitrogen and carbon, and free of silicon, wherein
said transition metal is at least one element selected from the group consisting of titanium, vanadium, cobalt, nickel, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten.
2. The photomask blank of claim 1 , wherein said antireflective film and said etching mask film being composed of different elements or composed of the same elements in a different compositional ratio.
3. The photomask blank of claim 1 , wherein said light-shielding film has a selectivity ratio in fluorine dry etching of at least 2 relative to said etching mask film.
4. The photomask blank of claim 1 , wherein said transparent substrate has a selectivity ratio in fluorine dry etching of at least 10 relative to said etching mask film.
5. The photomask blank of claim 1 , wherein said etching mask film is composed of chromium alone or a chromium compound comprising chromium and at least one element selected from oxygen, nitrogen and carbon.
6. The photomask blank of claim 5 , wherein said chromium compound contains at least 50 atom % of chromium.
7. The photomask blank of claim 1 , wherein said etching mask film is composed of tantalum alone or a tantalum compound comprising tantalum and free of silicon.
8. The photomask blank of claim 1 , wherein said light-shielding film is composed of silicon alone or a silicon compound comprising silicon and at least one element selected from oxygen, nitrogen and carbon.
9. The photomask blank of claim 1 , wherein said light-shielding film is composed of an alloy of a transition metal with silicon or a transition metal silicon compound comprising a transition metal, silicon, and at least one element selected from oxygen, nitrogen and carbon.
10. A photomask blank of claim 2 , wherein
said etching mask film comprises chromium with a chromium content of at least 50 atom %, and
said antireflective film comprises chromium and oxygen with a chromium content of less than 50 atom %.
11. The photomask blank of claim 9 , wherein said transition metal is molybdenum.
12. The photomask blank of claim 9 , wherein said light-shielding film further comprises nitrogen with a nitrogen content of 5 atom % to 40 atom %.
13. The photomask blank of claim 1 , wherein said etching mask film has a thickness of 2 to 30 nm.
14. The photomask blank of claim 1 , wherein a phase shift film intervenes as said another film between the transparent substrate and the light-shielding film.
15. The photomask blank of claim 14 , wherein said phase shift film is a halftone phase shift film.
16. A method for preparing a photomask, comprising patterning the photomask blank of claim 1 .
17. The method of claim 16 , comprising fluorine dry etching said light-shielding film through said etching mask film as an etching mask.
18. The method of claim 16 , comprising fluorine dry etching said transparent substrate through said etching mask film as an etching mask.
19. The method of claim 16 , wherein said photomask is a Levenson mask.