Wafer level semiconductor package and fabrication method thereof
A wafer level semiconductor package is provided. A warpage control barrier line formed in every package of a single wafer prevents wafer from warping. The changed shape of the interface between a semiconductor chip and a molding layer at the edge of the package disperses stress applied to the outside of the package, and suppress the generation and propagation of crack. The size of the package is reduced to that of the semiconductor, and the thickness of the package is minimized.
1. A semiconductor package, comprising:
a first semiconductor chip with a first conductive redistribution layer directly formed thereon;
a second semiconductor chip with a smaller size than the first semiconductor chip, said second semiconductor chip mounted on the first semiconductor chip;
a molding layer formed directly on the first semiconductor chip and around the second semiconductor chip;
a plurality of conductive posts electrically connected to the first conductive redistribution layer, said conductive posts penetrating the molding layer;
a warpage control barrier line directly formed on the first semiconductor chip, said warpage control barrier line being arranged at the outside of the second semiconductor chip, a second conductive redistribution layer formed on the molding layer and electrically connected to the conductive posts; and
an outer connecting part electrically connected to the second conductive redistribution layer,
wherein the warpage control barrier line and the molding layer have different Young's modulus with each other,
wherein the warpage control barrier line takes the shape of a continuous ring.
2. The semiconductor package of claim 1 , wherein the warpage control barrier line is a metal line.
3. The semiconductor package of claim 1 , further comprising a warpage control barrier layer formed on a bottom surface of the first semiconductor chip.
4. The semiconductor package of claim 1 , wherein the warpage control barrier line is arranged near or at an edge of the first semiconductor chip.
5. The semiconductor package of claim 1 , wherein the warpage control barrier line takes the shape of a discontinuous ring.
6. The semiconductor package of claim 1 , wherein the interface between the first semiconductor chip and the molding layer is enlarged at an edge of the first semiconductor chip.
7. The semiconductor package of claim 6 , wherein the interface between the first semiconductor chip and the molding layer at the edge of the first semiconductor chip is lower than a top surface of the first semiconductor chip.
8. The semiconductor package of claim 6 , wherein the top surfaces of the first semiconductor chip and the second semiconductor chip face each other, and the first semiconductor chip and the second semiconductor chip are electrically connected to each other via a bump.
9. The semiconductor package of claim 6 , wherein the bottom surface of the second semiconductor chip is mounted by a die attach process above the top surface of the first semiconductor chip.
10. The semiconductor package of claim 6 , wherein a surface of the second semiconductor chip is exposed to an exterior of the package.
11. The semiconductor package of claim 6 , further comprising a thin film passive device formed between the first semiconductor chip and the second semiconductor chip.
12. The semiconductor package of claim 6 , wherein the edge of the first semiconductor chip has a stepped part, and the stepped part is filled with a molding compound.
13. The semiconductor package of claim 6 , wherein the edge of the first semiconductor chip has a tilted part, and the tilted part is filled with a molding compound.