Semiconductor IC having electrical fuse capable of preventing thermal diffusion
View Patent ↗Provided is a semiconductor integrated circuit. The semiconductor integrated circuit comprises: a pair of interconnections; a fuse connecting the pair of interconnections; and one or more heat dissipation patterns connecting the pair of interconnections and are disposed around the fuse.
1. A semiconductor integrated circuit comprising:
a pair of interconnections;
a fuse connecting the pair of interconnections; and
one or more heat dissipation patterns connecting the pair of interconnections and are disposed around the fuse.
2. The semiconductor integrated circuit according to claim 1 , wherein the one or more heat dissipation patterns comprise:
a main heat dissipation pattern whose one end is disposed adjacent to the fuse and the other end faces an edge of one of the interconnections.
3. The semiconductor integrated circuit according to claim 2 , wherein the main heat dissipation pattern has a portion that is bent at least once.
4. The semiconductor integrated circuit according to claim 2 , wherein the one or more heat dissipation patterns further comprise at least one sub heat dissipation pattern disposed around the main heat dissipation pattern.
5. The semiconductor integrated circuit according to claim 4 , wherein the at least one sub heat dissipation pattern has a stripe shape.
6. The semiconductor integrated circuit according to claim 1 , wherein at least one of the one or more heat dissipation patterns comprises loop-shaped heat dissipation pattern surrounding an edge of the pair of interconnections.
7. The semiconductor integrated circuit according to claim 1 , wherein one of the pair of interconnections comprises a first interconnection unit having a protruding portion and a second interconnection unit spaced a predetermined distance from the first interconnection unit and having a concave portion that houses the protruding portion.
8. The semiconductor integrated circuit according to claim 6 , wherein the fuse is in contact with the protruding portion of the first interconnection unit.
9. The semiconductor integrated circuit according to claim 1 , wherein one of the pair of the interconnections is connected to a program voltage source, and the other is connected to a ground terminal.
10. A semiconductor integrated circuit comprising:
a first lower interconnection having a predetermined area;
a second lower interconnection positioned on substantially the same plane as the first lower interconnection and spaced a predetermined distance from the first lower interconnection;
a first upper interconnection configured to overlap with the first lower interconnection;
a second upper interconnection positioned on substantially the same plane as the first upper interconnection, spaced a predetermined distance from the first upper interconnection, and configured to overlap with the second lower interconnection;
a fuse connected to the first lower interconnection and the second upper interconnection;
a first group of heat dissipation paths connecting the first lower interconnection and the first upper interconnection and are disposed around the fuse; and
a second group of heat dissipation paths connecting the second lower interconnection and the second upper interconnection and are disposed around the fuse.
11. The semiconductor integrated circuit according to claim 10 , wherein the first group of heat dissipation paths comprise a plurality of heat dissipation patterns, and the number of the plurality of heat dissipation patterns is smaller than the number of heat dissipation patterns composing the second group of heat dissipation paths.
12. The semiconductor integrated circuit according to claim 10 , wherein at least one of the first and second groups of heat dissipation paths comprises:
a main heat dissipation pattern having one end which is disposed adjacent to the fuse and the other end which is disposed adjacent to the edge of the interconnections and has at least one bent portion; and
at least one sub dissipation pattern disposed around the main heat dissipation pattern.
13. The semiconductor integrated circuit according to claim 12 , wherein the sub heat dissipation pattern has a stripe structure.
14. The semiconductor integrated circuit according to claim 10 , wherein the first lower interconnection has a protruding portion protruding toward the second lower interconnection, and the second lower interconnection has a concave portion housing the protruding portion.
15. The semiconductor integrated circuit according to claim 14 , wherein the fuse is in contact with the protruding portion of the first lower interconnection.
16. The semiconductor integrated circuit according to claim 10 , wherein the first group of heat dissipation paths further comprise a loop pattern surrounding the edges of the first upper and lower interconnections.
17. The semiconductor integrated circuit according to claim 10 , wherein the second group of heat dissipation paths further comprise a loop pattern surrounding the edges of the second upper and lower interconnections.