Semiconductor memory apparatus, and circuit and method for controlling faulty address therein

1. A faulty address control circuit comprising:

a variable resistance fuse unit configured to be driven in response to an address signal, a resistance value of the variable resistance fuse unit being determined based on an amount of an applied current to the variable resistance fuse unit;

a driving unit configured to output a driving signal based on the resistance value of the variable resistance fuse unit in response to a faulty address control signal; and

an address storage and determination unit configured to receive the address signal, and be driven by the driving signal to output the address signal or an inverted signal of the address signal.

2. The faulty address control circuit according to claim 1 , wherein the variable resistance fuse unit comprises a variable resistance element in which a state of crystals is changed based on the amount of applied current.

3. The faulty address control circuit according to claim 1 , wherein the variable resistance fuse unit comprises:

a first switching element connected between a current supply terminal and a first node and driven in response to the address signal; and

a variable resistance element connected between the first node and a ground voltage terminal, wherein a resistance value of the variable resistance element represents the resistance value of the variable resistance fuse unit, and the resistance value of the variable resistance element is determined based on an amount of a current applied through the first switching element.

4. The faulty address control circuit according to claim 3 , wherein the variable resistance element comprises an element whose state of crystals is changed based on the amount of the applied current.

5. The faulty address control circuit according to claim 4 , wherein the variable resistance element comprises a phase change material.

6. The faulty address control circuit according to claim 4 , wherein the variable resistance element comprises a germanium/ stibium/tellurium(Ge2Sb2Te5: GST) compound.

7. The faulty address control circuit according to claim 3 , wherein the driving unit comprises:

a current source connected to a power supply voltage terminal;

a second switching element connected between the current source and a second node and driven in response to the faulty address control signal; and

a third switching element connected between the second node and the first node and driven in response to the faulty address control signal.

8. The faulty address control circuit according to claim 7 , wherein the address storage and determination unit comprises:

a latch section configured to latch an output signal of the second node;

a first transmission gate configured to be driven in response to an output signal of the latch section to output the inverted signal of the address signal; and

a second transmission gate configured to be driven in response to the output signal of the latch section to output a non-inverted signal of the address signal.

9. The faulty address control circuit according to claim 8 , wherein the address storage and determination unit outputs the inverted signal of the address signal through the first transmission gate when the variable resistance element is in a high resistance state.

10. The faulty address control circuit according to claim 8 , wherein the address storage and determination unit outputs the non-inverted signal of the address signal through the second transmission gate when the variable resistance element is in a low resistance state.