Granted Patent B2

US 8,330,526 · App. 12/836,997 · Granted Dec 11, 2012

Abstract

Claims (34)

1. A low voltage detector, of comprising:

a voltage and current reference circuit for producing a reference voltage V REF , wherein the voltage and current reference circuit includes a first self-cascode MOSFET structure (SCM), and wherein the first SCM produces V REF ;

a power supply voltage monitor circuit, coupled to the voltage and current reference circuit and to a terminal voltage, for monitoring voltage of the terminal voltage and for producing a voltage V MON related to the voltage of the terminal voltage; and

a voltage comparator, coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit, for outputting a signal in response to a differential between V REF and V MON , wherein the low voltage detector has a trip point, and wherein V REF and V MON have a same behavior with respect to temperature, thereby reducing variation in the trip point with changes in temperature,

wherein the power supply voltage monitor circuit includes a second self-cascode MOSFET structure (SCM), wherein the second SCM produces V MON , and wherein V MON defines the trip point of the low voltage detector.

2. The low voltage detector of claim 1 , in which the first SCM operates in moderate to strong inversion mode.

3. The low voltage detector of claim 1 , in which V REF exhibits complementary to absolute temperature (CTAT) behavior.

4. The low voltage detector of claim 1 , in which the first SCM includes a first transistor having its drain connected to its gate, and a second transistor having its drain coupled to a source of the first transistor, its gate coupled to the gate of the first transistor and its source coupled to ground potential, wherein a value of V REF is a zero-bias threshold voltage of the second transistor.

5. The low voltage detector of claim 1 , in which the first transistor of the first SCM is biased to operate in saturation region and the second transistor of the first SCM is biased to operate in triode region.

6. The low voltage detector of claim 1 , in which the second SCM operates in moderate to strong inversion mode.

7. The low voltage detector of claim 1 , in which VMON exhibits complementary to absolute temperature (CTAT) behavior.

8. The low voltage detector of claim 1 , in which the second SCM includes a first transistor having its drain connected to its gate, and a second transistor having its drain coupled to a source of the first transistor, its gate coupled to the gate of the first transistor and its source coupled to the terminal voltage, and wherein a voltage drop across the second transistor defines a value of V MON .

9. The low voltage detector of claim 8 , in which the first transistor of the second SCM is biased to operate in saturation region and the second transistor of the second SCM is biased to operate in triode region.

10. A System-on-Chip (SoC), comprising:

a microcontroller unit (MCU), disposed on a substrate of an integrated circuit, and powered by a power supply; and

a low voltage detector, disposed on the substrate of the integrated circuit, coupled to the MCU and to the power supply, the low voltage detector including:

a voltage and current reference circuit for producing a reference voltage V REF .

a power supply voltage monitor circuit, coupled to the voltage and current reference circuit, for monitoring voltage of the power supply and for producing a voltage V MON related to the voltage of the power supply, wherein the power supply voltage monitor circuit includes a self-cascode MOSFET structure (SCM), and

wherein the SCM produces V MON , and

a voltage comparator, coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit, for outputting an output signal in response to a differential between V REF and V MON , wherein V REF and V MON have a same behavior with respect to temperature, wherein the low voltage detector has a trip point, and wherein the output signal changes in response to the voltage of the power supply equaling the voltage of the trip point.

11. The SoC of claim 10 , in which the SCM includes a first PMOS transistor having its drain connected to its gate, and a second PMOS transistor having its drain coupled to a source of the first PMOS transistor, its gate coupled to the gate of the first PMOS transistor and its source coupled to the terminal voltage, and wherein VMON is defined as voltage at a voltage monitor node between the source of first PMOS transistor and the drain of second PMOS transistor.

12. The SoC of claim 10 , including an adjustable current mirror circuit, coupled between the SCM and a ground potential node, for trimming a value of V MON to change the trip point.

13. The SoC of claim 12 , in which the value of V MON is trimmed by the adjustable current mirror circuit adjusting current being sunk from the voltage monitor node to the ground potential node.

14. The SoC of claim 13 , in which the adjustable current mirror circuit includes:

a trim control, coupled to the voltage monitor node of the SCM; and

a plurality of NMOS trimming transistors coupled to the trim control and to the ground potential node, wherein the value of V MON is adjusted by the trim control coupling either none, one, or more than one NMOS trimming transistors between the voltage monitor node and the ground potential node.

15. An integrated circuit, comprising:

a voltage detector, disposed on a substrate of an integrated circuit, the voltage detector comprising:

a voltage and current reference circuit for producing a reference voltage V REF , wherein the voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) that produces V REF , wherein V REF exhibits complementary to absolute temperature (CTAT) behavior;

a power supply voltage monitor circuit, coupled to the voltage and current reference circuit and to a power supply, for monitoring voltage of the power supply and for producing a voltage V MON related to the voltage of the power supply, wherein the power supply voltage monitoring circuit includes another SCM that produces V MON , wherein V MON exhibits CTAT behavior; and

a voltage comparator, coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit, for outputting an output signal in response to a differential between V REF and V MON , wherein the voltage detector has a trip point, and

wherein the output signal changes in response to the voltage of the power supply equaling the voltage of the trip point.

16. The integrated circuit of claim 15 , in which the SCM of the voltage and current reference circuit includes a first transistor having its drain connected to its gate, and a second transistor having its drain coupled to a source of the first transistor, its gate coupled to the gate of the first transistor and its source coupled to ground potential, wherein a value of V REF is a zero-bias threshold voltage of the second transistor.

17. The integrated circuit of claim 16 , in which the other SCM of the power supply voltage monitor circuit includes a first transistor having its drain connected to its gate, and a second transistor having its drain coupled to a source of the first transistor, its gate coupled to the gate of the first transistor and its source coupled to the terminal voltage, and wherein a voltage drop across the second transistor defines a value of V MON .

Assignments (25)