Robust joint structure for flip-chip bonding
An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a copper bump at a main surface of the first work piece and having a first dimension; and a nickel-containing barrier layer over and adjoining the copper bump. The second work piece is bonded to the first work piece and includes a bond pad at a main surface of the second work piece; and a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad. A ratio of the first dimension to the second dimension is greater than about 1. Further, a solder region electrically connects the copper bump to the bond pad, with a vertical distance between the bond pad and the copper bump being greater than about 30 μm.
1. An integrated circuit structure comprising:
a first work piece comprising:
an under bump metallurgy (UBM) at a main surface of the first work piece;
a copper bump over the UBM and having a first dimension in a first plane parallel to the main surface of the first work piece; and
a nickel-containing barrier layer over and adjoining the copper bump;
a second work piece bonded to the first work piece and comprising:
a bond pad at a main surface of the second work piece; and
a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad, wherein the second dimension is measured in a second plane parallel to the main surface of the second work piece, and wherein a ratio of the first dimension to the second dimension is greater than about 1; and
a solder region electrically connecting the copper bump to the bond pad, wherein the solder region contacts a surface of the nickel-containing barrier layer facing the second work piece to form an interface, and substantially does not contact sidewalls of the copper bump, wherein the interface has a dimension substantially equal to the first dimension.
2. The integrated circuit structure of claim 1 , wherein the first work piece is a semiconductor chip comprising integrated circuits, and the second work piece is a package substrate.
3. The integrated circuit structure of claim 1 , wherein the first work piece is a package substrate, and the second work piece is a semiconductor chip comprising integrated circuits.
4. The integrated circuit structure of claim 1 , wherein the copper bump has a thickness less than about 60 μm.
5. The integrated circuit structure of claim 1 , wherein the ratio of the first dimension to the second dimension is further greater than about 1.15.
6. The integrated circuit structure of claim 1 , wherein the vertical distance between the bond pad and the copper bump is further greater than about 40 μm.
7. The integrated circuit structure of claim 1 further comprising a gold-containing layer between the solder region and the nickel-containing barrier layer.
8. The integrated circuit structure of claim 1 , wherein the bond pad of the second work piece comprises copper.
9. An integrated circuit structure comprising:
a package substrate comprising:
a copper bump at a main surface of the package substrate and having a first dimension in a first plane parallel to the main surface of the package substrate; and
a nickel-containing barrier layer over and adjoining the copper bump;
a semiconductor chip comprising integrated circuits therein, wherein the semiconductor chip comprises:
a bond pad at a main surface of the semiconductor chip; and
a solder mask at the main surface of the semiconductor chip and having a solder resist opening with a second dimension exposing a portion of the bond pad, wherein the second dimension is measured in a second plane parallel to the main surface of the semiconductor chip, and wherein a ratio of the first dimension to the second dimension is greater than about 1; and
a solder region electrically connecting the copper bump to the bond pad, wherein a vertical distance between the bond pad and the copper bump is greater than about 30 μm.
10. The integrated circuit structure of claim 9 , wherein the copper bump has a thickness less than about 60 μm.
11. The integrated circuit structure of claim 9 , wherein the ratio of the first dimension to the second dimension is further greater than about 1.15.
12. The integrated circuit structure of claim 9 , wherein the vertical distance between the bond pad and the copper bump is further greater than about 40 μm.
13. The integrated circuit structure of claim 9 further comprising a gold-containing layer between the solder region and the nickel-containing barrier layer.
14. The integrated circuit structure of claim 9 , wherein the bond pad of the semiconductor chip comprises copper.
15. The integrated circuit structure of claim 9 further comprising an under bump metallurgy (UBM) at the main surface of the package substrate and underlying the copper bump.