Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devices
View Patent ↗An integrated circuit device having a capacitor structure and methods of manufacture are disclosed. The device has a substrate, e.g., silicon wafer, silicon on insulator, epitaxial wafer. The device has a dielectric layer overlying the substrate and a polysilicon layer overlying the dielectric layer. The device has a tungsten silicide layer overlying the polysilicon layer and a first oxide layer overlying the tungsten silicide layer. A nitride layer overlies the oxide layer. A second oxide layer is overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure to form a capacitor dielectric. The device also has an upper capacitor plate formed overlying the second oxide layer.
1. An integrated circuit device having a capacitor structure, comprising:
a substrate;
a dielectric layer overlying the substrate;
a first polysilicon layer overlying the dielectric layer;
a tungsten silicide layer overlying the first polysilicon layer;
a first oxide layer overlying the tungsten silicide layer;
a nitride layer overlying the oxide layer;
a second oxide layer overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure, the sandwiched oxide on nitride on oxide structure forming a capacitor dielectric material; and
an upper capacitor plate formed overlying the second oxide layer.
2. The device of claim 1 wherein the tungsten silicide layer having a granular characteristic.
3. The device of claim 1 wherein the first oxide is provided using a high temperature oxide process.
4. The device of claim 3 wherein the high temperature oxide process comprises depositing an oxygen bearing species at a temperature ranging from about 600° C. to about 850° C.
5. The device of claim 1 wherein the second oxide is provided using a high temperature oxide process.
6. The device of claim 5 wherein the high temperature oxide process comprises depositing an oxygen bearing species at a temperature ranging from about 600° C. to about 850° C.
7. The device of claim 1 wherein the capacitor structure is a high voltage capacitor being capable of operating at a voltage greater than about 30 volts.
8. The device of claim 1 wherein the tungsten silicide layer and the first polysilicon layer provide for one or more gate structures for the integrated device.
9. The device of claim 1 wherein the capacitor structure is provided for an LCD drive or a controller.
10. The device of claim 1 wherein the silicon nitride is deposited at a temperature ranging from about 600° C. to about 850° C.