Exhaust for CVD reactor
View Patent ↗A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports.
1. A chemical vapor deposition reactor comprising:
(a) a reaction chamber having an interior;
(b) a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior;
(c) an exhaust system including an exhaust manifold having a passage and one or more ports, the passage communicating with the interior of the chamber through the one or more ports; and
(d) one or more cleaning elements mounted within the chamber, the one or more cleaning elements being movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports.
2. A reactor as claimed in claim 1 , wherein the chamber has an entry port for insertion and removal of substrates and a shutter mounted to the chamber and movable between (i) an open position in which the shutter is clear of the entry port and (ii) a closed position in which the shutter blocks the entry port, and the one or more cleaning elements are mounted to the shutter for movement therewith.
3. A reactor as claimed in claim 2 , wherein the cleaning elements are (i) in the run position when the shutter is in the closed position and (ii) in the cleaning position when the shutter is in the open position.
4. A reactor as claimed in claim 2 , wherein the exhaust manifold defines a ring shape and the one or more ports includes a plurality of round apertures.
5. A reactor as claimed in claim 4 , wherein the one or more cleaning elements is a plurality of plungers attached to the shutter.
6. A reactor as claimed in claim 5 , wherein each plunger has a conical tip.
7. A reactor as claimed in claim 6 , wherein each conical tip defines an angle relative to a central axis of the chamber that is approximately equal to the angle defined by a chamfered inner edge of each of the plurality of round apertures.
8. A reactor as claimed in claim 2 , wherein the exhaust manifold includes a labyrinth including a plurality of baffles and the one or more ports is a single cylindrical aperture.
9. A reactor as claimed in claim 8 , wherein the one or more cleaning elements is a lower portion of the shutter.
10. A reactor as claimed in claim 9 , wherein the lower portion of the shutter has a chamfered inner edge.
11. A reactor as claimed in claim 10 , wherein the chamfered inner edge of the lower portion of the shutter defines an angle relative to a central axis of the reactor that is approximately equal to the angle defined by a chamfered inner edge of the aperture of the exhaust manifold.
12. A reactor as claimed in claim 1 , further comprising a spindle mounted within the chamber configured to rotate about an axis extending in upward and downward directions, an upper end of the spindle configured to releasably engage a wafer carrier configured to hold a plurality of wafers.
13. A reactor as claimed in claim 12 , further comprising a motor drive configured to rotate the spindle about the axis.
14. A reactor as claimed in claim 12 , further comprising a heater configured to heat the wafer carrier.