Package structures for integrating thermoelectric components with stacking chips
Package structures for integrating thermoelectric components with stacking chips are presented. The package structures include a chip with a pair of conductive through vias. Conductive elements are disposed one side of the chip contacting the pair of conductive through vias. Thermoelectric components are disposed on the other side of the chip, wherein the thermoelectric component includes a first type conductive thermoelectric element and a second type conductive thermoelectric element respectively corresponding to and electrically connecting to the pair of conductive through vias. A substrate is disposed on the thermoelectric component, wherein the thermoelectric component, the pair of conductive through vias and the conductive element form a thermoelectric current path. Therefore, heat generated from the chip is transferred outward through a thermoelectric path formed from the thermoelectric components, the conductive through vias and the conductive elements.
1. A package structure, comprising:
a chip with a pair of conductive through vias;
a conductive element disposed on one side of the chip contacting the pair of conductive through vias;
a thermoelectric component disposed on the other side of the chip, wherein the thermoelectric component comprises a first type conductive thermoelectric element and a second type conductive thermoelectric element respectively corresponding to and electrically connecting to the pair of conductive through vias; and
a substrate disposed on the thermoelectric component, wherein the thermoelectric component, the pair of conductive through vias and the conductive element form a thermoelectric current path, wherein the first type conductive thermoelectric element is P-type and the second type conductive thermoelectric element is N-type.
2. The package structure as claimed in claim 1 , wherein the conductive element comprises a pair of conductive bumps respectively corresponding to and electrically connecting to the pair of conductive through vias, and wherein the pair of conductive bumps is connected by a conductive layer.
3. The package structure as claimed in claim 1 , wherein the conductive element directly contacts and electrically connects to the pair of conductive through vias.
4. A package structure, comprising:
a substrate having a conductive element thereon;
a stack of multi-layered chips disposed on the substrate and electrically connected to the conductive element, wherein each chip of the stack of multi-layered chips has a plurality of conductive through vias, and wherein at least two of the conductive through vias of adjacent chips are connected by a first conductive bump;
a thermoelectric component disposed on the stack of multi-layered chips corresponding to and electrically connecting to the conductive through vias; and
a hot-end substrate disposed on the thermoelectric component, wherein the thermoelectric component comprises a first type conductive thermoelectric element and a second type conductive thermoelectric element respectively corresponding to and electrically connecting to the conductive through vias, and the first type conductive thermoelectric element is P-type and the second type conductive thermoelectric element is N-type.
5. The package structure as claimed in claim 4 , wherein the conductive element comprises a plurality of second conductive bumps respectively corresponding to and electrically connecting to the conductive through vias, and wherein at least one of the second conductive bumps is connected by a first conductive layer.
6. The package structure as claimed in claim 4 , wherein the hot-end substrate comprises materials with high thermal conductivity and with electrical isolation.
7. The package structure as claimed in claim 4 , wherein the hot-end substrate comprises silicon, Al 2 O 3 , or AlN.
8. The package structure as claimed in claim 4 , wherein the hot-end substrate comprises a recess cavity and the thermoelectric component is disposed in the recess cavity.
9. The package structure as claimed in claim 8 , further comprising a thermal conductive plate and the thermoelectric component is connected the hot-end substrate though the thermal conductive plate.
10. The package structure as claimed in claim 4 , further comprising a second conductive layer disposed between adjacent chips, and wherein the second conductive layer connects two first conductive bumps.
11. The package structure as claimed in claim 4 , further comprising an additional thermoelectric component disposed between the stack of multi-layered chips and the substrate.
12. A package structure, comprising:
a substrate;
a stack of multi-layered chips disposed on the substrate, wherein each chip of the stack of multi-layered chips has a plurality of conductive through vias, and wherein at least two of the conductive through vias of adjacent chips are connected by a first conductive bump;
a thermoelectric component disposed between the stack of multi-layered chips and the substrate corresponding to and electrically connecting to the conductive through vias; and
a conductive layer disposed on the other side of the stack of multi-layered chips and electrically connected to the conductive through vias, wherein the thermoelectric component comprises a first type conductive thermoelectric element and a second type conductive thermoelectric element respectively corresponding to and electrically connecting to the conductive through vias, and the first type conductive thermoelectric element is P-type and the second type conductive thermoelectric element is N-type.
13. The package structure as claimed in claim 12 , wherein the substrate is a hot-end substrate.
14. A package structure, comprising:
a first substrate;
a stack of multi-layered chips disposed on the first substrate, wherein each chip of the stack of multi-layered chips has a plurality of conductive through vias, and wherein two of the conductive through vias of adjacent chips are electrically connected;
a thermoelectric component comprising first type conductive thermoelectric elements and second type conductive thermoelectric elements, wherein the conductive thermoelectric elements are disposed on the upper and lower sides of the stack of multi-layered chips and respectively corresponding to and electrically connecting to the conductive through vias;
a second substrate disposed on the stack of multi-layered chips; and
wherein the conductive thermoelectric elements disposed between the first substrate and the stack of multi-layered chips are connected by a first conductive layer, and wherein the conductive thermoelectric elements disposed between the second substrate and the stack of multi-layered chips are connected by a second conductive layer, wherein the first type conductive thermoelectric elements are P-type and second type conductive thermoelectric elements are N-type.
15. The package structure as claimed in claim 14 , wherein the second substrate comprises silicon, Al 2 O 3 , or AlN.
16. The package structure as claimed in claim 14 , wherein two of the conductive through vias of adjacent chips of the stack of multi-layered chips are connected by a first conductive bump.