Apparatus and method for temperature control during polishing

1. A substrate carrier head, comprising:

a base plate;

a flexible membrane coupled to the base plate, wherein an outer surface of the flexible membrane provides a substrate-receiving surface, and an inner surface of the flexible membrane and the base plate define a plurality of chambers to provide independently adjustable pressures to a corresponding plurality of regions of the substrate-receiving surface; and

an edge heater disposed in a first chamber of the plurality of chambers corresponding to a perimeter region of the substrate-receiving surface, wherein the plurality of chambers are concentrically arranged, and the first chamber has a ring shape and is located outer most among the plurality of chamber.

2. The substrate carrier head of claim 1 , further comprising a cooling unit connected to a second chamber of the plurality of chambers corresponding to a central region of the substrate-receiving surface, wherein the second chamber has a circular shape and is located inner most among the plurality of the chambers.

3. The substrate carrier head of claim 2 , wherein the edge heater is a ring shaped heater attached to the inner surface of the flexible membrane in the first chamber.

4. The substrate carrier head of claim 3 , wherein the edge heater is a film heater comprising:

an upper film made of polyimide; and

a lower film made of polyimide; and

a heating element disposed between the upper film and the lower film.

5. The substrate carrier head of claim 3 , wherein the heating element is an etched coil.

6. The substrate carrier head of claim 2 , wherein the cooling unit is connected to the second chamber through an inlet opening located near a center of the second chamber and a plurality of outlet openings evenly distributed near an edge region of the second chamber.

7. The substrate carrier head of claim 6 , wherein the cooling unit comprises:

a fluid source connected to the inlet opening of the second chamber for supplying a fluid flow to the second chamber; and

a heat exchange unit configured to cool the fluid flow to a desired temperature.

8. The substrate carrier head of claim 6 , wherein the cooling unit comprises a fluid source connected to the inlet opening of the second chamber, and the cooling unit inflates and deflates the second chamber by providing a flow of a heat exchanging fluid to the second chamber and ceasing the flow of the heat exchanging fluid respectively.

9. The substrate carrier head of claim 2 , further comprising a heated retaining ring assembly disposed near an outer perimeter of the flexible membrane.

10. The substrate carrier head of claim 9 , wherein the heated retaining ring assembly comprises:

a retaining ring attached to the base plate; and

a ring-shaped film heater disposed between the retaining ring and the base plate.

11. An apparatus for polishing a substrate, comprising:

a platen rotatable about a central axis;

a polishing pad disposed on the platen; and

a substrate carrier head configured to hold a substrate and to press the substrate against the polishing pad during processing, the substrate carrier head comprises:

a base plate;

a flexible membrane coupled to the base plate, wherein an outer surface of the flexible membrane provides a substrate-receiving surface, and an inner surface of the flexible membrane and the base plate define a plurality of chambers to provide independently adjustable pressures to a corresponding plurality of regions of the substrate-receiving surface; and

an edge heater disposed in a first chamber of the plurality of chambers corresponding to a perimeter region of the substrate-receiving surface.

12. The apparatus of claim 11 , wherein the substrate carrier head further comprises a cooling unit connected to in a second chamber of the plurality of chambers corresponding to a central region of the substrate-receiving surface.

13. The apparatus of claim 12 , further comprising a spot heater configured to direct thermal energy to a target region on the polishing pad that contacts an edge region of the substrate during polishing, wherein the spot heater comprises a heating lamp disposed above the polishing pad.

14. The apparatus of claim 13 , wherein the target region is located immediately upstream to the substrate carrier head.

15. The apparatus of claim 12 , wherein the substrate carrier head further comprises a heated retaining ring assembly disposed near an outer perimeter of the flexible membrane.

16. The apparatus of claim 15 , further comprising a controller connected with one or more sensors configured to measure temperature of the substrate and the polishing pad, wherein the controller adjusts the spot heater, the heated retaining ring assembly, the edge heater, and the cooling unit according to temperature measurements of the polishing pad and the substrate.

17. A method for processing a substrate, comprising:

mounting a substrate on a substrate carrier head;

rotating a polishing pad; and

polishing the substrate using the substrate carrier head and the polishing pad, wherein polishing the substrate comprises:

moving the substrate relative to the rotating polishing pad while pressing the substrate against the polishing pad using the substrate carrier head; and

heating an edge region of the substrate, wherein mounting the substrate comprises mounting the substrate on a flexible membrane having a plurality of chambers, and heating the edge region comprises activating a heater disposed in an outer chamber of the flexible membrane.

18. The method of claim 17 , wherein polishing the substrate further comprises cooling a central region of the substrate, and cooling the central region of the substrate comprises providing a flow of a heat exchange fluid to a central chamber of the flexible membrane.

19. The method of claim 18 , wherein heating the edge region of the substrate further comprises heating a retaining ring disposed radially outward of the flexible membrane.

20. The method of claim 17 , further comprising heating a target region on the polishing pad, the target region is within a band that contacts the edge region of the substrate during polishing.