Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
View Patent ↗Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
1. A composition comprising an inert carrier gas and a silicon compound of the formula
wherein R 1 , R 2 and R 3 may be the same as or different from the other and each is independently selected from the group consisting of H, C 1 -C 5 alkyl, C 3 -C 6 cycloalkyl, aryl and arylalkyl; and
X, Y, and Z may be the same as or different from the other and each is independently selected from the group consisting of H, alkyl, alkylamino, dialkylamino and alkylhydrazido;
with the proviso that when R 1 , R 2 , X and Y are methyl groups and R 3 is hydrogen, Z cannot be hydrogen, wherein said silicon compound is in a vapor form suitable for use under chemical vapor deposition conditions,
and further comprising a co-reactant selected from among ammonia, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.
2. The composition of claim 1 , wherein said inert gas is selected from among helium, argon and nitrogen.
3. The composition of claim 1 , wherein pressure of said vapor is in a range of from about 1 Torr to about 80 Torr.
4. A composition comprising an inert carrier gas and a silicon compound of the formula
wherein R 1 , R 2 and R 3 may be the same as or different from the other and each is independently selected from the group consisting of H, C 1 -C 5 alkyl, C 3 -C 6 cycloalkyl, aryl and arylalkyl; and
each of X, Y and Z is alkylamino, and
wherein said silicon compound is in a vapor form suitable for use under chemical vapor deposition conditions.
5. The composition of claim 4 , further comprising a co-reactant.
6. The composition of claim 5 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.
7. The composition of claim 1 , further comprising a solvent.
8. The composition of claim 7 , wherein the solvent comprises a hydrocarbon solvent.
9. The composition of claim 7 , wherein the hydrocarbon solvent is selected from the group consisting of alkanes, alkenes, alkynes, cycloalkanes, aromatic compounds, benzene, benzene derivatives, alkanols and amines.
10. The composition of claim 7 , wherein the solvent comprises an alkane solvent.
11. The composition of claim 1 , wherein R 1 , R 2 and R 3 are the same as one another.
12. The composition of claim 1 , wherein R 1 , R 2 and R 3 are different from one another.
13. The composition of claim 1 , wherein R 1 , R 2 and R 3 are each hydrogen.
14. The composition of claim 1 , wherein R 1 and R 2 are each selected from C 1 -C 5 alkyl and R 3 is hydrogen.
15. The composition of claim 1 , wherein R 1 and R 2 are each selected from C 3 -C 6 cycloalkyl, aryl and arylalkyl.
16. The composition of claim 1 , wherein each of X, Y and Z is alkyl.
17. The composition of claim 1 , wherein each of X, Y and Z is dialkylamino.
18. The composition of claim 1 , wherein each of X, Y and Z is alkylhydrazido.
19. The composition of claim 4 , further comprising a hydrocarbon solvent.
20. The composition of claim 19 , wherein the hydrocarbon solvent comprises an alkane solvent.