A method for manufacturing a polishing pad that has high level of optical detection accuracy and is prevented from causing slurry leak from between the polishing region and the light-transmitting region includes preparing a cell-dispersed urethane composition by a mechanical foaming method; placing a light-transmitting region at a predetermined position on a face material or a belt conveyor, continuously discharging the cell-dispersed urethane composition onto part of the face material or the belt conveyor where the light-transmitting region is not placed; placing another face material or belt conveyor on the discharged cell-dispersed urethane composition; curing the cell-dispersed urethane composition to form a polishing region including a polyurethane foam, so that a polishing sheet is prepared; applying a coating composition containing an aliphatic and/or alicyclic polyisocyanate to one side of the polishing sheet and curing the coating composition to form water-impermeable film; and cutting the polishing sheet.
1. A polishing pad comprising a polishing layer provided on a base material layer, wherein the polishing layer comprises a thermosetting polyurethane foam containing roughly spherical interconnected cells having an aperture, the thermosetting polyurethane foam comprises an isocyanate component and an active hydrogen-containing compound as starting components, the isocyanate component contains 90% by weight or more of diphenylmethane diisocyanate and/or a modified product thereof, the active hydrogen-containing compound contains 60 to 98% by weight of polycaprolactone polyol, and 15 to 40% by weight of a compound having the number of functional groups reactive with an isocyanate group of 3, the isocyanate group concentration relative to the total amount of the isocyanate component and the active hydrogen-containing compound is 10 to 15% by weight, and the polishing layer has the absolute value of a change rate between compressibility A in a dry condition and compressibility B in a wet condition ({(B−A)/A}×100) of 100 or less, and the dry condition is defined as being held at a temperature of 23° C. and a humidity of 50% for 40 hours, and the wet condition is defined as being held in pure water at a temperature of 23° C. for 24 hours.
2. The polishing pad according to claim 1 , wherein the thermosetting polyurethane foam has a weight change rate after immersion in water for 24 hours of 10% or more.
3. The polishing pad according to claim 1 , wherein the polishing layer is self-adhered to the base material layer.
4. The polishing pad according to claim 1 , wherein the thermosetting polyurethane foam has an interconnected cell structure having an average cell diameter of 40 to 100 μm and an average aperture diameter of 5 to 30 μm.
5. A process for producing a semiconductor device, comprising a step of polishing a surface of a semiconductor wafer using the polishing pad according to claim 1 .