SOI wafer, semiconductor device, and method for manufacturing SOI wafer
The present invention is an SOI wafer comprising at least: an SOI layer; a silicon oxide film; and a base wafer, wherein the SOI layer has a plane orientation of (100), and the base wafer has a resistivity of 100 Ω·cm or more and a plane orientation different from (100). As a result, there is provided the SOI wafer and the manufacturing method thereof that have no complicated manufacturing step, defects on a bonding interface which are not practically a problem in number and a high interface state density (Dit) for trapping carriers on an interface of a BOX layer and the base wafer.
1. An SOI wafer comprising at least:
an SOI layer;
a silicon oxide film; and
a base wafer,
wherein:
the SOI layer has a plane orientation of (100);
the base wafer has a resistivity of 100 Ω·cm or more; and
the base wafer has a plane orientation of (110), the base wafer has a plane orientation of (111), or the base wafer has a plane orientation that has an off-angle of 1 degree or more and less than 45 degrees from (100).
2. A semiconductor device comprising at least an RF device formed on the SOI layer of the SOI wafer according to claim 1 .
3. A method for manufacturing an SOI wafer comprising at least:
bonding a base wafer and a bond wafer, each of which is formed of a silicon single crystal, to each other through a silicon oxide film; and
reducing a film thickness of the bond wafer to form an SOI layer, wherein:
the bond wafer has a plane orientation of (100);
the base wafer has a resistivity of 100 Ω·cm or more; and
the base wafer has a plane orientation of (110), the base wafer has a plane orientation of (111), or the base wafer has a plane orientation that has an off-angle of 1 degree or more and less than 45 degrees from (100).
4. The method for manufacturing an SOI wafer according to claim 3 , wherein the bond wafer has an ion-implanted layer formed near a surface thereof by implanting at least one of a hydrogen ion and a rare gas ion from the surface thereof, and a film thickness of the bond wafer is reduced by bonding the bond wafer to the base wafer through the silicon oxide film and then performing delamination at the ion-implanted layer.
5. The method for manufacturing an SOI wafer according to claim 4 , wherein the silicon oxide film is formed on a surface of the base wafer and then the base wafer is bonded to the bond wafer.