Methods of removing a metal nitride material
A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material.
1. A method of removing a metal nitride material, comprising:
forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material; and
subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material.
2. The method of claim 1 , wherein forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material comprises forming a semiconductor device structure comprising an exposed tungsten feature and an exposed titanium nitride feature.
3. The method of claim 1 , wherein forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material comprises forming a tungsten plug and a titanium nitride liner on a substrate.
4. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive comprises contacting the semiconductor device structure with the solution comprising water, ozone, and at least one additive selected from the group consisting of hydrochloric acid, hydrogen fluoride, ammonium hydroxide, tetramethylammonium hydroxide, and hydrogen peroxide.
5. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive comprises contacting the semiconductor device structure with the solution comprising water, ozone, and hydrogen fluoride.
6. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive comprises contacting the semiconductor device structure with the solution comprising water, ozone, hydrogen fluoride, and hydrogen chloride.
7. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive comprises contacting the semiconductor device structure with the solution consisting of water, ozone, and at least one additive.
8. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material comprises etching the exposed metal nitride material without substantially etching the exposed metal material.
9. The method of claim 1 , wherein forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material comprises forming a semiconductor device structure comprising an exposed titanium feature, an exposed vanadium feature, an exposed nickel feature, an exposed copper feature, an exposed zinc feature, an exposed zirconium feature, an exposed niobium feature, an exposed molybdenum feature, an exposed ruthenium feature, an exposed rhodium feature, an exposed cadmium feature, an exposed lanthanum feature, an exposed hafnium feature, an exposed tantalum feature, or an exposed tungsten feature.
10. The method of claim 1 , wherein forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material comprises forming a semiconductor device structure comprising an exposed titanium nitride feature, an exposed tantalum nitride feature, or an exposed tungsten nitride feature.
11. The method of claim 1 , wherein forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material comprises forming the exposed metal nitride material in contact with sidewalls of an insulative material and an exposed surface of a semiconductor substrate and the exposed metal material in contact with sidewalls and a horizontal portion of the exposed metal nitride material.
12. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material comprises oxidizing the exposed metal material and the exposed metal nitride material.
13. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive comprises subjecting the semiconductor device structure to the solution at a temperature of from approximately 20° C. to approximately 25° C.
14. The method of claim 1 , wherein subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive comprises subjecting the semiconductor device structure to the solution having a pH of less than approximately 4.
15. A method of removing a metal nitride material, comprising:
forming a semiconductor device structure comprising an exposed transition metal material and an exposed metal nitride material; and
subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material without removing the exposed transition metal material.
16. The method of claim 15 , wherein forming a semiconductor device structure comprising an exposed transition metal material and an exposed metal nitride material comprises forming the exposed transition metal material from titanium, vanadium, nickel, copper, zinc, zirconium, niobium, molybdenum, ruthenium, rhodium, cadmium, lanthanum, hafnium, tantalum, or tungsten.