Cleaning module, EUV lithography device and method for the cleaning thereof
View Patent ↗In order to clean optical components ( 35 ) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, ( 33 ) arranged to apply an electric and/or magnetic field, downstream of the heating filament ( 29 ) in the direction of flow of the hydrogen ( 31, 32 ). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam ( 32 ).
1. A cleaning module for cleaning a component inside an extreme-ultraviolet lithography device, comprising:
a source of molecular gas,
a heating unit configured to convert the molecular gas at least partially into ions and producing a byproduct comprising a thermal beam, wherein the ions and the byproduct flow in a given flow direction,
at least one electromagnetic deflection unit arranged to deflect the ions in a flow direction of the ions to an ion destination within the extreme-ultraviolet lithography device, wherein the flow direction of the ions differs from the given flow direction, and
an element establishing a flow direction of the byproduct to a predetermined byproduct destination and physically segregating the byproduct destination from the ion destination, wherein the flow direction of the byproduct differs from the flow direction of the ions.
2. The cleaning module according to claim 1 , wherein the element comprises at least one electromagnetic filter unit configured to filter out a portion of the ions having a given mass range from the ions.
3. The cleaning module according to claim 1 , further comprising at least one electromagnetic acceleration unit configured to change kinetic energy of the ions.
4. The cleaning module according to claim 1 , further comprising at least one radical generation unit.
5. The cleaning module according to claim 4 , wherein the radical generation unit comprises an electron source.
6. The cleaning module according to claim 4 , wherein the radical generation unit is arranged, in the flow direction of the ions, downstream of the deflection unit.
7. The cleaning module according to claim 1 , further comprising a housing, in which at least the heating unit and the deflection unit are arranged, and an outlet, from which the ions exit as a prepared gas.
8. An extreme-ultraviolet lithography device comprising at least one cleaning module according to claim 1 .
9. A projection system for an extreme-ultraviolet lithography device comprising at least one cleaning module according to claim 1 .
10. An illumination system for an extreme-ultraviolet lithography device comprising at least one cleaning module according to claim 1 .
11. The cleaning module according to claim 1 , wherein the byproduct further comprises a material.
12. The cleaning module according to claim 1 , wherein the ions directed to the component have masses in a given mass range and the byproduct further comprises ions in mass ranges other than the given mass range.
13. The cleaning module according to claim 1 , wherein the element comprises a byproduct reservoir configured to confine the byproduct in the byproduct destination.
14. The cleaning module according to claim 1 , wherein the element comprises a barrier impervious to the byproduct and provided with a pinhole for the ions.
15. A cleaning module for cleaning a component of an extreme-ultraviolet lithography device, the cleaning module comprising:
a supply line for molecular gas,
a heating unit producing a cleaning gas and producing a byproduct comprising a thermal beam, wherein the cleaning gas the atomic gas and the byproduct flow together in an initial flow direction, and
an element applying at least one of an electric field and a magnetic field and arranged downstream of the heating unit in the initial flow direction and configured to direct the cleaning gas to a cleaning gas destination within the extreme-ultraviolet lithography device in a flow direction differing from the initial flow direction and decoupled from a flow direction of the byproduct.
16. The cleaning module according to claim 15 , wherein the heating unit comprises an ionization device arranged downstream of a heating filament in the flow direction of the cleaning gas.
17. The cleaning module according to claim 15 , wherein the element applies an electric field and is configured as a deflection element having a positive voltage potential.
18. The cleaning module according to claim 17 , further comprising a cooling device arranged against the deflection element to capture the thermal beam.
19. The cleaning module according to claim 17 , wherein the deflection element is mounted with at least one degree of freedom with respect to the heating unit.
20. The cleaning module according to claim 15 , wherein the byproduct further comprises a material.
21. An extreme-ultraviolet lithography device comprising at least one cleaning module according to claim 15 .
22. A projection system for an extreme-ultraviolet lithography device comprising at least one cleaning module according to claim 15 .
23. An illumination system for an extreme-ultraviolet lithography device comprising at least one cleaning module according to claim 15 .
24. The cleaning module according to claim 15 , wherein the element further comprises a byproduct reservoir configured to confine the byproduct in a byproduct destination segregated from the cleaning gas destination.
25. A method for cleaning a component mounted inside an extreme-ultraviolet lithography device, comprising:
ionizing a molecular gas and thereby producing ions and a byproduct comprising a thermal beam;
electromagnetically deflecting the ions from an initial direction of travel of both the ions and the byproduct into an altered direction of travel as a prepared gas, wherein the altered direction of travel differs from the initial direction of travel and is decoupled from a direction of travel of the byproduct; and
exposing the component while mounted inside the extreme-ultraviolet lithography device to the prepared gas.
26. The method according to claim 25 , further comprising influencing the kinetic energy of the ions.
27. The method according to claim 25 , further comprising converting at least a portion of the ions into radicals.
28. The method according to claim 27 , wherein the ions are converted into the radicals by supplying electrons.
29. The method according to claim 25 , wherein the molecular gas comprises at least one of hydrogen, deuterium, tritium, a noble gas, a halogen gas, oxygen, and nitrogen.
30. The method according to claim 25 , wherein said exposing comprises a pulsed exposing of the component to the prepared gas.
31. The method according to claim 25 , wherein the byproduct further comprises a material.
32. The cleaning module according to claim 25 , wherein the ions directed to the component have masses in a given mass range and the byproduct further comprises ions in mass ranges other than the given mass range.
33. The method according to claim 25 , further comprising filtering the prepared gas to filter out at least substantially all ions having masses in a predetermined mass range prior to said exposing.
34. The method according to claim 25 , wherein the direction of travel of the byproduct differs from the initial direction of travel and from the altered direction of travel, and further comprising segregating the byproduct from the prepared gas and from the component prior to said exposing.
35. A method for cleaning a component mounted inside an extreme-ultraviolet lithography device, comprising:
generating a cleaning gas and a byproduct comprising a thermal beam with a heating filament,
confining the byproduct at a destination segregated from the component, and
deflecting the cleaning gas without the byproduct out of an initial flow direction of the cleaning gas and the byproduct onto the component while the component is mounted inside the extreme-ultraviolet lithography device with at least one of an electric field and a magnetic field, thereby decoupling the cleaning gas from the byproduct.
36. The method according to claim 35 , further comprising ionizing the cleaning gas prior to said deflecting.
37. The method according to claim 36 , further comprising filtering the cleaning gas with an electromagnetic field.
38. The method according to claim 35 , wherein said deflecting comprises targeted scanning of the component.
39. The method according to claim 35 , wherein said generating comprises generating atomic hydrogen.
40. The method according to claim 35 , wherein the byproduct further comprises a material.