Conducting paste for device level interconnects
View Patent ↗A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.
1. An electrically conducting, dual paste mixture for connecting device level interconnects, comprising:
a first conducting paste having a set of sinterable particles selected from the group consisting of micro particles, nano particles, or a combination thereof embedded in a first resin system;
a second conducting paste having a set of low melting point micro particles;
wherein said first and second pastes are intermixed so that said set of sinterable particles and said set of meltable particles remain segregated from each other at a microscopic level and said set of sinterable particles remain sinterable and said meltable particles remain meltable.
2. The conducting, dual paste mixture of claim 1 , wherein said second conducting paste contains at least one alloy having a melting point no greater than 200° C.
3. The conducting, dual paste mixture of claim 2 , wherein said first conducting paste contains noble metal fillers.
4. The conducting, dual paste mixture of claim 3 , wherein said noble metal fillers are chosen from the group: gold and silver flakes.
5. The conducting, dual paste of claim 4 , wherein said noble metal fillers comprise an average flake size no greater than 5 microns.
6. The conducting, dual paste mixture of claim 4 , wherein said first conducting paste and said second conducting paste maintain their respective micro level characteristics even after final curing.
7. The conducting, dual paste of claim 3 , wherein said noble metal fillers comprise an average flake size no greater than 5 microns.
8. The conducting, dual paste mixture of claim 3 , wherein said first conducting paste and said second conducting paste maintain their respective micro level characteristics even after final curing.
9. A method of forming an electrically conducting, dual paste mixture with metal loading in the range of 85-95% useful for connecting micron device level interconnects, the method comprising:
a) embedding a nano particle within a polymer constituent by adding a resin to a silver nano particle solution in a solvent;
b) dissolving said polymer constituent containing said nano particles in said silver nano particle solution and evaporating said solvent to form an embedded nano particle polymer wherein said polymer constituent wraps the nano particles to embed said particles within said polymer constituent;
c) combining said embedded nano particle polymer constituent with dry micro powder and an anhydride; and
d) fully mixing said embedded nano particle polymer, anhydride, and micropowder.