Phase change memory state determination using threshold edge detection
View Patent ↗Subject matter disclosed herein relates to techniques to read a memory cell that involve a threshold edge phenomenon of a reset state of phase change memory.
1. A method comprising:
increasing a magnitude of a bias signal applied to a phase change memory (PCM) cell in response to a read command;
inferring a value of resistance of said PCM cell based, at least in part, on a measurement of a cell current and/or voltage of said PCM cell; and
determining a state of said PCM cell based, at least in part, on a change in said resistance occurring while said magnitude is increased.
2. The method of claim 1 , wherein said determining said state of said PCM cell further comprises:
determining said state to comprise a set state in an absence of a substantial decrease in said resistance while said magnitude is increased; and
determining said state to comprise a reset state in the presence of a substantial decrease in said resistance while said magnitude is increased.
3. The method of claim 2 , wherein said set state corresponds to a substantially crystalline state of said PCM cell and said reset state corresponds to a substantially amorphous state of said PCM cell.
4. The method of claim 1 , wherein said determining whether said change in said resistance occurs further comprises:
maintaining at least one previous value of said cell current or voltage measurement; and
comparing said at least one previous value of said cell current or voltage measurement to a value of a subsequent measurement of said cell current or voltage.
5. The method of claim 1 , wherein said change in said resistance corresponds to a threshold edge of an amorphous state of said PCM cell.
6. The method of claim 1 , wherein said bias signal comprises a single ramping pulse.
7. The method of claim 1 , wherein said bias signal is applied to a bitline of said PCM cell.
8. A non-volatile memory controller comprising:
at least one interface to connect to an array of phase change memory (PCM) cells; and
electronic circuitry to:
increase a magnitude of a bias signal applied to at least one of said array of PCM cells in response to a read command;
infer a value of resistance of said at least one of said PCM cells based, at least in part, on a measurement of a cell current and/or voltage of said at least one of said PCM cells; and
determine a state of said at least one of said PCM cells based, at least in part, on a change in said resistance occurring while said magnitude is increased.
9. The non-volatile memory controller of claim 8 , wherein said state comprises a set state in an absence of a substantial decrease in said resistance while said magnitude is increased; and wherein said state comprises a reset state in the presence of a substantial decrease in said resistance while said magnitude is increased.
10. The non-volatile memory controller of claim 9 , wherein said set state corresponds to a substantially crystalline state of said at least one of said PCM cells and said reset state corresponds to a substantially amorphous state of said at least one of said PCM cells.
11. The non-volatile memory controller of claim 8 , further comprises a circuit to:
maintain at least one previous value of said cell current or voltage measurement; and
compare said at least one previous value of said cell current or voltage measurement to a value of a subsequent measurement of said cell current or voltage.
12. The non-volatile memory controller of claim 8 , wherein said change in said resistance corresponds to a threshold edge of an amorphous state of said at least one of said PCM cells.
13. The non-volatile memory controller of claim 8 , wherein said bias signal comprises a single ramping pulse.
14. A system comprising:
a memory device comprising an array of phase change memory (PCM) cells comprising a phase change material, said memory device further comprising a memory controller to:
increase a magnitude of a bias signal applied to at least one of said PCM cells in response to a read command;
infer a value of resistance of said at least one of said PCM cells based, at least in part, on a measurement of a cell current and/or voltage of said at least one of said PCM cells; and
determine a state of said at least one of said PCM cells based, at least in part, on a change in said resistance occurring while said magnitude is increased; and
a processor to host one or more applications and to initiate said read command to said memory controller to provide access to said memory cells in said memory cell array.
15. The system of claim 14 , wherein said state comprises a set state in an absence of a substantial decrease in said resistance while said magnitude is increased; and wherein said state comprises a reset state in the presence of a substantial decrease in said resistance while said magnitude is increased.
16. The system of claim 15 , wherein said set state corresponds to a substantially crystalline state of said at least one of said PCM cells and said reset state corresponds to a substantially amorphous state of said at least one of said PCM cells.
17. The system of claim 14 , further comprises a circuit to:
maintain at least one previous value of said cell current or voltage measurement; and
compare said at least one previous value of said cell current or voltage measurement to a value of a subsequent measurement of said cell current or voltage.
18. The system of claim 14 , wherein said change in said resistance corresponds to a threshold edge of an amorphous state of said at least one of said PCM cells.
19. The system of claim 14 , wherein said bias signal comprises a single ramping pulse.
20. The system of claim 14 , wherein said bias signal is applied to a bitline of at least one of said PCM cells.