Copper alloy bonding wire for semiconductor device
View Patent ↗The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.
1. A semiconductor-device copper-alloy bonding wire comprising:
at least either one of Mg and P in total concentration of 10 to 700 mass ppm; and
a concentrated layer where a total concentration of Mg and P is more than or equal to ten times than a foregoing concentration on a surface.
2. The semiconductor-device copper-alloy bonding wire of claim 1 comprising:
at least any one of Ag, Pd, Pt and Au in total of 10 to 5000 mass ppm.
3. The semiconductor-device copper-alloy bonding wire according to claim 2 , wherein the total concentration of Mg and P is 45 to 700 mass ppm.
4. The semiconductor-device copper-alloy bonding wire according to claim 2 , wherein the total concentration of Mg and P in said concentrated layer is 0.05 to 10 mass %.
5. The semiconductor-device copper-alloy bonding wire according to claim 2 , wherein a maximum of the total concentration of Mg and P in said concentrated layer is 0.2 to 30 mass %.
6. The semiconductor-device copper-alloy bonding wire according to claim 2 , further comprising a top skin layer where a maximum concentration of C is more than or equal to 20 mass %, and which has a thickness of 0.2 to 10 nm outside said concentrated layer.
7. The semiconductor device copper-alloy bonding wire according to claim 2 , further comprising a top skin layer where a maximum concentration of C is more than or equal to 20 mass % outside said concentrated layer, and wherein:
the total concentration of Mg and P in said concentrated layer is 0.05 to 10 mass %; and
a thickness of said top skin layer is 0.2 to 10 nm.
8. The semiconductor device copper-alloy bonding wire according to claim 2 , further comprising a top skin layer where a maximum concentration of C is more than or equal to 20 mass % outside said concentrated layer, and wherein:
a maximum of the total concentration of Mg and P in said concentrated layer is 0.2 to 30 mass %; and
a thickness of said top skin layer is 0.2 to 10 nm.
9. The semiconductor-device copper-alloy bonding wire according to claim 2 , wherein a thickness of said concentrated layer is 0.2 to 20 nm.
10. The semiconductor-device copper-alloy bonding wire of claim 1 further comprising:
at least any one of Be, Al, Bi, Si, In, Ge, Ir and Mn in total of 5 to 300 mass ppm.
11. The semiconductor-device copper-alloy bonding wire of claim 1 further comprising:
at least any one of Ca, Y, La, Ce, Pr and Nd in total of 5 to 300 mass ppm.
12. The semiconductor-device copper-alloy bonding wire of claim 1 further comprising:
at least any one of Ag, Pd, Pt and Au in total of 10 to 5000 mass ppm; and
at least any one of Be, Al, Bi, Si, In, Ge, Ir and Mn in total of 5 to 300 mass ppm.
13. The semiconductor-device copper-alloy bonding wire of claim 1 further comprising:
at least any one of Ag, Pd, Pt and Au in total of 10 to 5000 mass ppm; and
at least any one of Ca, Y, La, Ce, Pr and Nd in total of 5 to 300 mass ppm.
14. The semiconductor-device copper-alloy bonding wire of claim 1 further comprising:
at least any one of Ag, Pd, Pt and Au in total of 10 to 5000 mass ppm;
at least any one of Be, Al, Bi, Si, In, Ge, Ir and Mn in total of 5 to 300 mass ppm; and
at least any one of Ca, Y, La, Ce, Pr and Nd in total of 5 to 300 mass ppm.
15. The semiconductor-device copper-alloy bonding wire according to claim 1 , wherein the total concentration of Mg and P is 45 to 700 mass ppm.
16. The semiconductor-device copper-alloy bonding wire according to claim 1 , wherein the total concentration of Mg and P in said concentrated layer is 0.05 to 10 mass %.
17. The semiconductor-device copper-alloy bonding wire according to claim 16 , wherein an average of oxygen concentration in said concentrated layer and said top skin layer is 0.1 to 15 mass %.
18. The semiconductor-device copper-alloy bonding wire according to claim 1 , wherein a maximum of the total concentration of Mg and P in said concentrated layer is 0.2 to 30 mass %.
19. The semiconductor-device copper-alloy bonding wire according to claim 18 , wherein an average of oxygen concentration in said concentrated layer and said top skin layer is 0.1 to 15 mass %.
20. The semiconductor-device copper-alloy bonding wire according to claim 1 , further comprising a top skin layer where a maximum concentration of C is more than or equal to 20 mass %, and which has a thickness of 0.2 to 10 nm outside said concentrated layer.
21. The semiconductor-device copper-alloy bonding wire according to claim 20 , wherein an average of oxygen concentration in said concentrated layer and said top skin layer is 0.1 to 15 mass %.
22. The semiconductor device copper-alloy bonding wire according to claim 1 , further comprising a top skin layer where a maximum concentration of C is more than or equal to 20 mass % outside said concentrated layer, and wherein:
the total concentration of Mg and P in said concentrated layer is 0.05 to 10 mass %; and a thickness of said top skin layer is 0.2 to 10 nm.
23. The semiconductor device copper-alloy bonding wire according to claim 1 , further comprising a top skin layer where a maximum concentration of C is more than or equal to 20 mass % outside said concentrated layer, and wherein:
a maximum of the total concentration of Mg and P in said concentrated layer is 0.2 to 30 mass %; and
a thickness of said top skin layer is 0.2 to 10 nm.
24. The semiconductor-device copper-alloy bonding wire according to claim 1 , wherein a thickness of said concentrated layer is 0.2 to 20 nm.