Granted Patent B2

US 8,324,005 · App. 12/907,556 · Granted Dec 4, 2012

Abstract

Claims (34)

1. A method of forming a semiconductor structure, comprising:

forming a first layer of a nitride semiconductor material;

forming a substantially relaxed nitride interlayer on the first layer of nitride semiconductor material, the substantially relaxed nitride interlayer having a first lattice constant, wherein the nitride interlayer comprises aluminum and gallium and is conductively doped with an n-type dopant; and

forming a second layer of the nitride semiconductor material, wherein the first layer of the nitride semiconductor material, the nitride interlayer, and the second layer of the nitride semiconductor material have a combined thickness of at least about 0.5 μm;

forming a plurality of discrete portions in the nitride interlayer, wherein the discrete portions have a material composition that is different than a material composition of the nitride interlayer;

wherein the first layer of the nitride semiconductor material is tensile strained; and

wherein the nitride semiconductor material has a second lattice constant such that the first layer of nitride semiconductor material is more tensile strained on one side of the substantially relaxed nitride interlayer than the second layer of nitride semiconductor material is on the other side of the substantially relaxed nitride interlayer.

2. The method of claim 1 , wherein the second layer of the nitride semiconductor material is formed to be compressively strained on one side of the substantially relaxed nitride interlayer and wherein the first layer of the nitride semiconductor material is formed to be tensile strained on the other side of the substantially relaxed nitride interlayer.

3. The method of claim 1 , further comprising:

forming a discontinuous mask layer directly on the substantially relaxed nitride interlayer before forming the second layer of the nitride semiconductor material.

4. The method of claim 3 , wherein the discontinuous mask layer comprises SiN and/or MgN.

5. The method of claim 3 , wherein the discontinuous mask layer comprises BN.

6. The method of claim 3 , further comprising forming a second discontinuous mask layer directly on the first nitride layer, wherein the nitride interlayer is formed on the second discontinuous mask layer.

7. The method of claim 1 , wherein the nitride interlayer is doped with silicon at a concentration of about 1×10 19 cm −3 to about 1×10 21 cm −3 .

8. The method of claim 1 , wherein the nitride interlayer comprises a graded layer.

9. The method of claim 1 , wherein forming the nitride interlayer comprises forming a plurality of sub-layers.

10. The method of claim 1 , wherein the nitride interlayer comprises a plurality of 1 nAlN: Si/GaN: Si pairs.

11. The method of claim 10 , wherein the nitride interlayer comprises a plurality of 1 nAlGaN: Si/GaN: Si pairs.

12. The method of claim 1 , wherein forming the first layer of the nitride semiconductor material comprises forming the first layer of nitride semiconductor material on a substrate, wherein the nitride semiconductor material has a first coefficient of thermal expansion and the substrate has a second coefficient of thermal expansion that is less than the first coefficient of thermal expansion such that the second layer tends to be more tensile strained at room temperature than at an elevated growth temperature.

13. The method of claim 1 , wherein the first layer and the second layer have less bow at a temperature of about 700 to 800° C. than at a growth temperature of the nitride layer.

14. The method of claim 1 , wherein the interlayer has a thickness and resistivity such that a voltage drop across the interlayer is less than 0.1V.

15. The method of claim 14 , wherein the interlayer has a thickness of about 0.015 μm and a resistivity less than about 2000 ohm-cm at a current density of about 32 A/cm 2 .

16. The method of claim 1 , wherein forming the nitride interlayer comprises forming the nitride interlayer at a temperature of about 800° C.

17. The method of claim 1 , wherein forming the first layer comprises forming the first layer to have a thickness of less than about 0.5 μm.

18. The method of claim 1 , wherein the nitride interlayer comprises a first nitride interlayer having a material composition and a doping, the method further comprising:

forming a second nitride interlayer on the second layer of nitride semiconductor material, wherein the second nitride interlayer comprises aluminum and gallium and is conductively doped with an n-type dopant, and wherein the second nitride interlayer has a material composition and/or doping concentration that is different from the material composition and/or doping concentration of the first nitride interlayer; and

forming a third layer of the nitride semiconductor material on the second nitride interlayer.

19. The method of claim 18 , wherein the first nitride layer has a first gallium concentration and the second nitride layer has a second gallium concentration that is greater than the first gallium concentration.

20. The method of claim 18 , wherein the first nitride layer has a first doping concentration and the second nitride layer has a second doping concentration that is greater than the first doping concentration.

21. The method of claim 1 , wherein the nitride interlayer has a first bandgap and the discrete portions have a second bandgap that is lower than the first bandgap.

22. The method of claim 1 , wherein the discrete portions are formed to be present in the nitride interlayer in an amount of between about 40 μm 2 and 60 μm 2 .

23. The method of claim 1 , wherein the discrete portions are formed to have a diameter between 0.01 μm and 0.1 μm.

24. The method of claim 1 , further comprising etching a layer of the semiconductor structure, wherein the nitride interlayer is used as an etch stop layer.

25. The method of claim 24 , further comprising using the etch stop layer for etch removal of the first layer of a nitride semiconductor material.

Assignments (9)