Split gate non-volatile memory cell with improved endurance and method therefor
View Patent ↗A non-volatile memory cell including a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region is provided. The non-volatile memory cell further includes a select gate structure overlying a first portion of the channel region. The non-volatile memory cell further includes a control gate structure formed overlying a second portion of the channel region, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.
1. A non-volatile memory cell comprising:
a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region;
a select gate structure formed over the substrate, wherein the select gate structure overlies a first portion of the channel region;
a control gate structure formed adjacent to the select gate structure, wherein the control gate structure overlies a second portion of the channel region, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of a radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.
2. The non-volatile memory cell of claim 1 , wherein the ratio of the radius of the radius of the control gate structure in the corner region to the height of the nanocrystal stack is substantially 1.
3. The non-volatile memory cell of claim 1 , wherein the ratio of the radius of the control gate structure in the corner region to the height of the nanocrystal stack is greater than 1.
4. The non-volatile memory cell of claim 1 , wherein the select gate structure has a concave shape in a corner region formed at an intersection of the first plane substantially parallel to the top surface of the substrate and a third plane substantially parallel to a side surface of the select gate structure.
5. The non-volatile memory cell of claim 1 , wherein the first portion and the second portion overlap.
6. A non-volatile memory cell comprising:
a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region;
a select gate structure formed over the substrate, wherein the select gate structure overlies a first portion of the channel region;
a control gate structure formed adjacent to the select gate structure, wherein the control gate structure overlies a second portion of the channel region, wherein the first portion and the second portion overlap, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of a radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.
7. The non-volatile memory cell of claim 6 , wherein the ratio of the radius of the control gate structure in the corner region to the height of the nanocrystal stack is substantially 1.
8. The non-volatile memory of cell claim 6 , wherein the ratio of radius of the control gate structure in the corner region to the height of the nanocrystal stack is greater than 1.
9. The non-volatile memory cell of claim 6 , wherein the select gate structure has a concave shape in a corner region formed at an intersection of the first plane substantially parallel to the top surface of the substrate and a third plane substantially parallel to a side surface of the select gate structure.