IP Library Granted Patent US 8,578,993
Granted Patent B2
US 8,578,993 · App. 12/921,653 · Granted Nov 12, 2013

Wafer bonding apparatus

Inventor: Satoshi Tawara (Nagasaki, JP)
Assignee: Mitsubishi Heavy Industries, Ltd.
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Quick Facts
Patent No.
US 8,578,993
App. No.
12/921,653
Granted
Nov 12, 2013
Kind
B2
Abstract

A wafer bonding apparatus of the present invention includes a first sample base configured to hold a first substrate; a second sample base configured to hold a second substrate to oppose to the first substrate; a load transferring section coupled to an outer edge portion of the first sample base and configured to support the first sample base to a first stage; and a drive unit configured to perform pressure bonding on the first substrate and the second substrate by driving the second sample base to the first stage. In the wafer bonding apparatus, it is possible to prevent that a load which is larger than a load applied on the outer edge portion of the first substrate is applied to the center of the first substrate, and to apply uniform load the first substrate and the second substrate, when pressure bonding is performed on the first substrate and the second substrate.

Claims (13)

1. A wafer bonding apparatus comprising:

an upper sample base provided in a bonding chamber and configured to hold a first substrate;

a lower sample base provided in said bonding chamber and configured to hold a second substrate to oppose to said first substrate;

a load transferring section transferring a point load to an outer edge portion of said upper sample base and configured to support said upper sample base to a first stage, wherein said load transferring section is provided in said bonding chamber;

an angle adjusting mechanism provided in said bonding chamber and configured to support said first sample base to said first stage through said load transferring section such that an orientation of said first sample base is changeable during bonding of said first substrate to said second substrate; and

a drive unit configured to perform pressure bonding on said first substrate and said second substrate by driving said first stage to said second sample base.

2. The wafer bonding apparatus according to claim 1 , wherein said the angle adjusting mechanism comprises:

a spherical flange fixed on said upper sample base;

a spherical base fixed on said first stage; and

a fixation flange configured to fix said sphere flange on said sphere base by swaging said sphere flange.

3. The wafer bonding apparatus according to claim 2 , wherein said angle adjusting mechanism is in line-contact with said load transferring section such that said load transferring section is supported by said angle adjusting mechanism.

4. The wafer bonding apparatus according to claim 2 , wherein said load transferring section comprises a plurality of columnar members, each of which is coupled at one end to the outer edge portion of said upper sample base and at the other end to said angle adjusting mechanism.

5. The wafer bonding apparatus according to claim 1 , wherein said load transferring section comprises a plurality of columnar members, which deform elastically such that said first substrate and said second substrate fit to each other when the pressure bonding of said first substrate and said second substrate is performed.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2016
From: MITSUBISHI HEAVY INDUSTRIES, LTD.
To: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD.
Reel/Frame 038896/0534 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2010
From: TAWARA, SATOSHI
To: MITSUBISHI HEAVY INDUSTRIES, LTD.
Reel/Frame 025351/0346 →
Continuity (1)
Related Publication 20110209832A1 · Sep 1, 2011