Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
A technique which prevents cracking in a solder resist layer covering an interposer surface between external coupling terminals of an interconnection substrate, thereby reducing the possibility of interconnect wire disconnection resulting from such cracking. A semiconductor package is mounted over an interconnection substrate. An underfill resin layer seals the space between the semiconductor package and the interconnection substrate. External coupling terminals, interconnect wires and a solder resist layer are formed over the surface of an interposer (constituent of the semiconductor package) where the semiconductor chip is not mounted. In an area where an interconnect wire passing between two neighboring ones of the external coupling terminals intersects with a line connecting the centers of the two external coupling terminals, the interconnect wire is not covered by the solder resist layer.
1. A semiconductor package comprising:
a semiconductor chip; and
an interposer having the semiconductor chip mounted over one surface thereof and a plurality of external coupling terminals formed over another surface,
the interposer including:
an interconnect wire passing between two neighboring ones of the external coupling terminals formed over the other surface; and
a solder resist layer formed over the other surface,
wherein the interconnect wire is exposed in an area where the interconnect wire intersects with a line connecting centers of the two external coupling terminals.
2. The semiconductor package according to claim 1 , wherein the two external coupling terminals are formed along an edge of the semiconductor chip.
3. The semiconductor package according to claim 1 , wherein the solder resist layer is formed only in peripheral areas of the external coupling terminals and their vicinities.
4. The semiconductor package according to claim 1 , wherein the solder resist layer has an opening in the area where the interconnect wire intersects with the line.
5. The semiconductor package according to claim 4 , wherein the opening is symmetric with respect to the line.
6. An interposer comprising:
a plurality of first external coupling terminals formed over one surface thereof;
a plurality of second external coupling terminals formed over another surface;
an interconnect wire passing between two neighboring ones of the second external coupling terminals formed over the other surface; and
a solder resist layer formed over the other surface,
wherein the interconnect wire is exposed in an area where the interconnect wire intersects with a line connecting centers of the two external coupling terminals.
7. A semiconductor device comprising:
an interconnection substrate;
a semiconductor package mounted over the interconnection substrate; and
an underfill resin layer filled between the interconnection substrate and the semiconductor package,
the semiconductor package including:
a semiconductor chip; and
an interposer having the semiconductor chip mounted over one surface thereof and a plurality of external coupling terminals formed over another surface,
the interposer including:
an interconnect wire passing between two neighboring ones of the external coupling terminals formed over the other surface; and
a solder resist layer formed over the other surface,
wherein the interconnect wire is not covered by the solder resist layer in an area where the interconnect wire intersects with a line connecting centers of the two external coupling terminals.
8. A method for manufacturing an interposer, comprising:
forming an interconnect wire over a base member;
coating a solder resist layer over the base member; and
selectively removing the solder resist layer by photographic exposure and development,
wherein at the process of removing the solder resist layer selectively, in an area where an interconnect wire passing between external coupling terminals in the base member intersects with a line connecting centers of two neighboring ones of the external coupling terminals, the interconnect wire is exposed.
9. A method for manufacturing a semiconductor device, comprising:
making a semiconductor package by mounting a semiconductor chip over an interposer;
mounting the semiconductor package over an interconnection substrate; and
filling an underfill resin layer between the semiconductor package and the interconnection substrate,
wherein in the interposer, in an area where an interconnect wire passing between external coupling terminals in the interposer intersects with a line connecting centers of two neighboring ones of the external coupling terminals, the interconnect wire is exposed.