Wireless communication unit and semiconductor device having a power amplifier therefor
View Patent ↗A semiconductor package device comprises a radio frequency power transistor having an output port operably coupled to a single de-coupling capacitance located within the semiconductor package device. The single de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor.
1. A semiconductor package device comprising a radio frequency power transistor having an output port operably coupled to a one and only one de-coupling capacitance located within the semiconductor package device, wherein the one and only one de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor, wherein the one and only one de-coupling capacitance is in the microfarad (μF) range.
2. The semiconductor package device of claim 1 further comprising a series resonant inductor between the radio frequency power transistor and the one and only one decoupling capacitance, such that the series resonant inductor and the one and only one decoupling capacitance are located in parallel across drain-source of the RF PA transistor.
3. The semiconductor package device of claim 1 , wherein the series resonant inductor and the one and only one decoupling capacitance provide a resonance frequency in a range of 120-150 MHz.
4. The semiconductor package device of claim 3 , wherein the resonance frequency provides an instantaneous bandwidth performance of the radio frequency power transistor in the range of 120-150 MHz.
5. The semiconductor package device preceding claim 1 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.
6. A wireless communication unit comprising a semiconductor package device having a radio frequency power transistor with an output port operably coupled to a one and only one de-coupling capacitance located within the semiconductor package device, wherein the one and only one de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor, wherein the one and only one de-coupling capacitance is in the microfarad (μF) range.
7. The semiconductor package device of claim 2 , wherein the series resonant inductor and the one and only one decoupling capacitance provide a resonance frequency in a range of 120-150 MHz.
8. The semiconductor package device of claim 7 , wherein the resonance frequency provides an instantaneous bandwidth performance of the radio frequency power transistor in the range of 120-150 MHz.
9. The semiconductor package device of claim 6 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.
10. The semiconductor package device of claim 2 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.
11. The semiconductor package device of claim 3 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.
12. The semiconductor package device of claim 4 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.
13. The semiconductor package device of claim 7 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.
14. The semiconductor package device of claim 8 , wherein the radio frequency power transistor is a single ended radio frequency power transistor.