IP Library Granted Patent US 8,736,064
Granted Patent B2
US 8,736,064 · App. 12/941,511 · Granted May 27, 2014

Structure and method of making interconnect element having metal traces embedded in surface of dielectric

Inventors: Hideki Kotake (Tokyo, JP); Kiyoshi Hyodo (Tokyo, JP); Inetaro Kurosawa (Tokyo, JP); Yukio Hashimoto (Hitachinaka, JP); Toku Yoshino (Tokyo, JP); Tomoo Iijima (Tokyo, JP)
Assignee: Invensas Corporation
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Quick Facts
Patent No.
US 8,736,064
App. No.
12/941,511
Granted
May 27, 2014
Kind
B2
Abstract

An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major surface. A plurality of first metal interconnect patterns are embedded in the plurality of first recesses and extend in one or more directions along the first major surface. A plurality of second metal interconnect patterns are embedded in the plurality of second recesses and extend in one or more directions along the second major surface. A plurality of non-hollow metal posts extend through the dielectric element between at least some of the plurality of first metal interconnect patterns and at least some of the plurality of second metal interconnect patterns.

Claims (29)

1. An interconnect element, comprising:

a single layer dielectric element having a first exposed major surface, a plurality of first recesses extending inwardly from said first major surface, and a second exposed major surface remote from said first major surface, a plurality of second recesses extending inwardly from said second major surface;

a plurality of first metal interconnect patterns embedded in said plurality of first recesses and extending in one or more directions along said first major surface; and

a plurality of second metal interconnect patterns embedded in said plurality of second recesses and extending in one or more directions along said second major surface; and

a plurality of non-hollow plated metal posts each extending through said dielectric element between at least one of said plurality of first metal interconnect patterns and at least one of said plurality of second metal interconnect patterns.

2. The interconnect element as claimed in claim 1 , wherein said plurality of first metal interconnect patterns have outer surfaces substantially co-planar with said first major surface.

3. The interconnect element as claimed in claim 1 , wherein said plurality of second metal interconnect patterns have outer surfaces substantially co-planar with said second major surface.

4. The interconnect element as claimed in claim 1 , wherein said dielectric element includes one or more thermoplastic resins.

5. The interconnect element as claimed in claim 1 , wherein said dielectric element includes at least one resin selected from the group consisting of PEEK (polyether ether ketone), PES (polyethersulfone), PPS (polyphenylene sulfide), PEN (polyethylene napthalate), a PEEK-PES polymer blend, and liquid crystal polymers.

6. The interconnect element as claimed in claim 1 , wherein a thickness of each of said plurality of first metal interconnect patterns is at least 10 microns.

7. The interconnect element as claimed in claim 1 , wherein a thickness of each of said plurality of second metal interconnect patterns is at least 10 microns.

8. The interconnect element as claimed in claim 1 , wherein each of said plurality of plated metal posts includes copper.

9. The interconnect element as claimed in claim 1 , wherein each of said plurality of plated metal posts includes high purity copper.

10. The interconnect element as claimed in claim 1 , wherein a length of each of said plurality of plated metal posts is at most 150 microns.

11. The interconnect element as claimed in claim 1 , wherein at least some of said plurality of first metal interconnect patterns are traces exposed at the first major surface of said dielectric element.

12. The interconnect element as claimed in claim 1 , wherein at least some of said plurality of first metal interconnect patterns are contacts exposed at the first major surface of said dielectric element.

13. The interconnect element as claimed in claim 1 , wherein at least some of said plurality of second metal interconnect patterns are traces exposed at the first major surface of said dielectric element.

14. The interconnect element as claimed in claim 1 , wherein at least some of said plurality of second metal interconnect patterns are contacts exposed at the second major surface of said dielectric element.

15. The interconnect element as claimed in claim 1 , wherein said plurality of first metal interconnect patterns are coated with a bond metal layer.

16. The interconnect element as claimed in claim 15 , wherein said bond metal layer includes gold.

17. The interconnect element as claimed in claim 1 , wherein said plurality of second metal interconnect patterns are coated with a bond metal layer.

18. The interconnect element as claimed in claim 17 , wherein said bond metal layer includes gold.

19. The interconnect element as claimed in claim 1 , wherein said interconnect element is suitable for heating to a temperature of between 150 and 350° C.

20. The interconnect element as claimed in claim 1 , wherein said interconnect element is suitable for exposure to a pressure between 20 and 100 kg/cm 2 .

21. The interconnect element as claimed in claim 1 , wherein said plurality of non-hollow plated metal posts are joined to said at least some first metal interconnect patterns.

22. The interconnect element as claimed in claim 1 , wherein said plurality of non-hollow plated metal posts are joined using one or more of heat and pressure to said at least some first metal interconnect patterns.

23. The interconnect element as claimed in claim 1 , wherein contact areas are defined wherever ends of said non-hollow plated metal posts contact said at least some first metal interconnect patterns, and at each such contact area, the first metal interconnect pattern in which that contact area is defined has its edges outside of the contact area.

24. The interconnect element as claimed in claim 1 , wherein contact areas are defined wherever ends of said non-hollow plated metal posts contact said at least some second metal interconnect patterns, and at each such contact area, the second metal interconnect pattern in which that contact area is defined has its edges outside of the contact area.

25. The interconnect element as claimed in claim 1 , wherein the plurality of first metal interconnect patterns have inner surfaces which contact bottom surfaces of the plurality of first recesses, the plurality of second metal interconnect patterns have inner surfaces which contact bottom surfaces of the plurality of second recesses, and the plurality of non-hollow plated metal posts each extend through the dielectric element between the inner surface of the at least one of the plurality of first metal interconnect patterns and the inner surface of the at least one of the plurality of second metal interconnect patterns.

Assignments (7)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0807 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0758 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2014
From: KUROSAWA, INETARO; HASHIMOTO, YUKIO
To: TESSERA INTERCONNECT MATERIALS, INC.
Reel/Frame 032626/0713 →
MERGER Recorded Jan 30, 2012
From: TESSERA INTERCONNECT MATERIALS, INC.
To: INVENSAS CORPORATION
Reel/Frame 027622/0384 →
Priority Claims (1)
JP 2005-15970 · Jan 24, 2005 · national
Continuity (4)
Continuation 11805300 · May 23, 2007
Continuation 11541734 · Oct 2, 2006
Continuation 11338455 · Jan 24, 2006
Related Publication 20110057324A1 · Mar 10, 2011