Device package and methods for the fabrication and testing thereof
View Patent ↗Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second surface to the layer, the via hole having a first perimeter at the first surface; (d) forming an aperture in the layer, wherein the aperture has a second perimeter within the first perimeter; and (e) providing a conductive structure for sealing the via structure. Also provided are sealed via structures, methods of detecting leakage in a sealed device package, sealed device packages, device packages having cooling structures, and methods of bonding a first component to a second component.
1. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein forming the opening comprises:
a. forming a through-hole from said lower surface to said insulating material; and
b. forming an aperture in said insulating material to said conductive material.
2. The method of claim 1 , wherein the size of the through-hole at said upper surface is smaller than the size of the though-hole at said lower surface.
3. The method of claim 1 , comprising at least one of:
a. a plurality of through-holes; and
b. a plurality of apertures.
4. The method of claim 3 , wherein said plurality of apertures are formed in a single through-hole.
5. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein forming the opening comprises removing a portion of said insulating material until a portion of said conductive material is exposed.
6. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein forming the opening comprises an etching process.
7. The method of claim 6 , wherein said conductive material is an etch stop in said etching process.
8. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein said insulating material spans across the opening over said upper surface.
9. The method of claim 8 , wherein the conductive material is:
a. on said insulating material spanning across the opening over said upper surface; and
b. over said upper surface.
10. The method of claim 8 , wherein the conductive material is:
a. on said insulating material spanning across the opening over said upper surface; and
b. between said lower surface and said upper surface.
11. The method of claim 8 , wherein said insulating material spanning across the opening over said upper surface is substantially planar.
12. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein said insulating material comprises a plurality of insulating layers.
13. The method of claim 12 , wherein said plurality of insulating layers comprise:
a. a first insulating layer spanning across the opening and over said upper surface; and
b. a second insulating layer on said first insulating layer and on sidewalls of the opening from said upper surface to said lower surface.
14. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein said insulating material comprises a dielectric material.
15. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein said conductive material comprises a metal material.
16. A method comprising:
a. providing a substrate including an upper surface and a lower surface;
b. forming an insulating material on said upper surface;
c. forming a conductive material on said insulating material; and
d. forming an opening:
i. from at least one of said upper surface and said lower surface to said conductive material; and
ii. through said insulating material,
wherein said conductive material is over at least one of:
a. said upper surface of the substrate; and
b. said lower surface of the substrate.
17. The method of claim 12 , wherein said plurality of insulating layers comprise a membrane having a thickness approximately the sum of:
a. the thickness of a first insulating layer; and
b. twice the thickness of a second insulating layer.